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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 18 — Aug. 30, 2010
  • pp: 18592–18597

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process

Boris Desiatov, Ilya Goykhman, and Uriel Levy  »View Author Affiliations


Optics Express, Vol. 18, Issue 18, pp. 18592-18597 (2010)
http://dx.doi.org/10.1364/OE.18.018592


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Abstract

We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

© 2010 OSA

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(230.7370) Optical devices : Waveguides

ToC Category:
Integrated Optics

History
Original Manuscript: June 25, 2010
Revised Manuscript: August 10, 2010
Manuscript Accepted: August 12, 2010
Published: August 16, 2010

Citation
Boris Desiatov, Ilya Goykhman, and Uriel Levy, "Demonstration of submicron square-like silicon waveguide using optimized LOCOS process," Opt. Express 18, 18592-18597 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-18-18592


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References

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