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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 18 — Aug. 30, 2010
  • pp: 19438–19443

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Krestnikov, Daniil Livshits, and Edik U. Rafailov  »View Author Affiliations

Optics Express, Vol. 18, Issue 18, pp. 19438-19443 (2010)

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A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability.

© 2010 OSA

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3600) Lasers and laser optics : Lasers, tunable
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: July 22, 2010
Revised Manuscript: August 19, 2010
Manuscript Accepted: August 23, 2010
Published: August 27, 2010

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Krestnikov, Daniil Livshits, and Edik U. Rafailov, "Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers," Opt. Express 18, 19438-19443 (2010)

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