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Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature |
Optics Express, Vol. 18, Issue 19, pp. 19902-19913 (2010)
http://dx.doi.org/10.1364/OE.18.019902
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Abstract
We report on a picosecond pulse source delivering near transform-limited pulses in the 1.55 µm wavelength region, based on an optically pumped InP-based mode locked Vertical External Cavity Surface Emitting Laser (VECSEL). The cavity combines two semiconductor elements, a gain structure which includes six strained InGaAlAs quantum wells and a hybrid metal-metamorphic Bragg bottom mirror bonded onto a CVD diamond substrate, and a single quantum well GaInNAs SEmiconductor Saturable Absorber Mirror (SESAM). The laser operates at a repetition frequency of 2 GHz and emits near-transform-limited 1.7 ps pulses with an average output power of 15 mW at room temperature, using 1.7 W pump power at 980nm. The RF line width of the free running laser has been measured to be less than 1 kHz.
© 2010 OSA
OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(320.7090) Ultrafast optics : Ultrafast lasers
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: June 3, 2010
Revised Manuscript: August 3, 2010
Manuscript Accepted: August 9, 2010
Published: September 3, 2010
Citation
Aghiad Khadour, Sophie Bouchoule, Guy Aubin, Jean-Christophe Harmand, Jean Decobert, and Jean-Louis Oudar, "Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature," Opt. Express 18, 19902-19913 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-19-19902
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