Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film

doi:10.1364/OE.18.020439

Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh »View Author Affiliations

Optics Express, Vol. 18, Issue 19, pp. 20439-20444 (2010)
http://dx.doi.org/10.1364/OE.18.020439

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Abstract

Visible electroluminescence (EL) with two composite bands, i.e., a violet band and a green-yellow band has been observed from Si-implanted silicon nitride thin films. By varying the intensity ratio of the two composite EL bands in terms of the injection current, strong white-color EL can be achieved at certain injection currents (e.g., ~265 mA/cm²). The observed transition in EL color from violet to white under different injection conditions is studied based on the understanding that the violet band is originated from silicon nitride matrix while the green-yellow band is related to the implanted Si. The Si-implanted silicon nitride thin film offers the possibility of electrically tunable white-light Si-based light emitters.

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: June 23, 2010
Revised Manuscript: July 26, 2010
Manuscript Accepted: July 28, 2010
Published: September 10, 2010

Citation
Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, "Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film," Opt. Express 18, 20439-20444 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-19-20439

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References

K. S. Cho, N.-M. Park, T.-Y. Kim, K.-H. Kim, G. Y. Sung, and J. H. Shin, “High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer,” Appl. Phys. Lett. 86(7), 071909 (2005). [CrossRef]
L.-Y. Chen, W.-H. Chen, and F. C.-N. Hong, “Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix,” Appl. Phys. Lett. 86(19), 193506 (2005). [CrossRef]
L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from silicon-rich nitride nanostructures,” Appl. Phys. Lett. 88(18), 183103 (2006). [CrossRef]
M. H. Wang, D. S. Li, Z. Z. Yuan, D. R. Yang, and D. L. Que, “Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009). [CrossRef]
Z. W. Pei, Y. R. Chang, and H. L. Hwang, “White electroluminescence from hydrogenated amorphous-SiNx thin films,” Appl. Phys. Lett. 80(16), 2839–2841 (2002). [CrossRef]
H. P. Dong, D. Q. Wang, K. J. Chen, J. Huang, H. C. Sun, W. Li, J. Xu, and Z. Y. Ma, “Field dependent electroluminescence from amorphous Si/SiNx multilayer structure,” Appl. Phys. Lett. 94(16), 161101 (2009). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, J. D. Ye, Y. Liu, M. Yang, J. I. Wong, Z. Liu, and S. Fung, “Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions,” Electrochem. Solid-State Lett. 12(2), H38–H40 (2009). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing,” J. Appl. Phys. 105(12), 123101 (2009). [CrossRef]
J. F. Ziegler, J. P. Biersach, and U. Littmark, SRIM (Pergamon, New York, 2006). www.srim.org .
K. Kalinowski, P. Di Marco, M. Cocchi, V. Fattori, N. Camaioni, and J. Duff, “Voltage-tunable-color multilayer organic light emitting diode,” Appl. Phys. Lett. 68(17), 2317 (1996). [CrossRef]
R. H. Yeh, W. H. Liu, S. Y. Lo, and J. W. Hong, “Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p-i-n thin-film LEDs fabricated on c-Si,” Solid-State Electron. 50(9), 1495–1500 (2006). [CrossRef]
H. E. Romero and M. Drndic, “Coulomb blockade and hopping conduction in PbSe quantum dots,” Phys. Rev. Lett. 95(15), 156801 (2005). [CrossRef] [PubMed]
Y. Liu, T. P. Chen, H. W. Lau, J. I. Wong, L. Ding, S. Zhang, and S. Fung, “Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals,” Appl. Phys. Lett. 89(12), 123101 (2006). [CrossRef]
L. Ding, T. P. Chen, M. Yang, J. I. Wong, Z. H. Cen, Y. Liu, F. R. Zhu, and A. A. Tseng, “Relationship between current transport and electroluminescence in Si+-implanted SiO2 thin films,” IEEE Trans. Electron. Dev. 56(11), 2785–2791 (2009). [CrossRef]
J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett. 44(4), 415–417 (1984). [CrossRef]
M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008). [CrossRef]
S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si Metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett. 90(18), 181121 (2007). [CrossRef]
P. Photopoulos and A. G. Nassipoulou, “Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers,” Appl. Phys. Lett. 77(12), 1816 (2000). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, Z. Liu, M. Yang, J. I. Wong, W. P. Goh, F. R. Zhu, and S. Fung, “Quenching and reaction of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film,” IEEE Trans. Electron. Dev. 56(12), 3212–3217 (2009). [CrossRef]

Anopchenko, A.
Camaioni, N.
Cen, Z. H.
Chang, Y. R.
Chen, K. J.
Chen, L.-Y.
Chen, T. P.
Chen, W.-H.
Cho, K. S.
Cocchi, M.
Dal Negro, L.
Di Marco, P.
Ding, L.
Dong, H. P.
Drndic, M.
Duff, J.
Fattori, V.
Fung, S.
Galli, G.
Goh, W. P.
Hamel, S.
Helm, M.
Hong, F. C.-N.
Hong, J. W.
Huang, J.
Hwang, H. L.
Kalinowski, K.
Kim, K.-H.
Kim, T.-Y.
Kimerling, L. C.
Lau, H. W.
Li, D.
Li, D. S.
Li, W.
Liu, W. H.
Liu, Y.
Liu, Z.
Lo, S. Y.
Ma, Z. Y.
Nassipoulou, A. G.
Park, N.-M.
Pavesi, L.
Pei, Z. W.
Photopoulos, P.
Powell, M. J.
Prucnal, S.
Que, D. L.
Robertson, J.
Romero, H. E.
Shin, J. H.
Skorupa, W.
Sun, H. C.
Sun, J. M.
Sung, G. Y.
Tseng, A. A.
Wang, D. Q.
Wang, M.
Wang, M. H.
Williamson, A.
Wong, J. I.
Xu, J.
Yang, D.
Yang, D. R.
Yang, M.
Ye, J. D.
Yeh, R. H.
Yi, J. H.
Yuan, Z.
Yuan, Z. Z.
Zhang, S.
Zhu, F. R.

Appl. Phys. Lett.

K. S. Cho, N.-M. Park, T.-Y. Kim, K.-H. Kim, G. Y. Sung, and J. H. Shin, “High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer,” Appl. Phys. Lett. 86(7), 071909 (2005). [CrossRef]
L.-Y. Chen, W.-H. Chen, and F. C.-N. Hong, “Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix,” Appl. Phys. Lett. 86(19), 193506 (2005). [CrossRef]
L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from silicon-rich nitride nanostructures,” Appl. Phys. Lett. 88(18), 183103 (2006). [CrossRef]
M. H. Wang, D. S. Li, Z. Z. Yuan, D. R. Yang, and D. L. Que, “Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009). [CrossRef]
Z. W. Pei, Y. R. Chang, and H. L. Hwang, “White electroluminescence from hydrogenated amorphous-SiNx thin films,” Appl. Phys. Lett. 80(16), 2839–2841 (2002). [CrossRef]
H. P. Dong, D. Q. Wang, K. J. Chen, J. Huang, H. C. Sun, W. Li, J. Xu, and Z. Y. Ma, “Field dependent electroluminescence from amorphous Si/SiNx multilayer structure,” Appl. Phys. Lett. 94(16), 161101 (2009). [CrossRef]
K. Kalinowski, P. Di Marco, M. Cocchi, V. Fattori, N. Camaioni, and J. Duff, “Voltage-tunable-color multilayer organic light emitting diode,” Appl. Phys. Lett. 68(17), 2317 (1996). [CrossRef]
Y. Liu, T. P. Chen, H. W. Lau, J. I. Wong, L. Ding, S. Zhang, and S. Fung, “Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals,” Appl. Phys. Lett. 89(12), 123101 (2006). [CrossRef]
J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett. 44(4), 415–417 (1984). [CrossRef]
S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si Metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett. 90(18), 181121 (2007). [CrossRef]
P. Photopoulos and A. G. Nassipoulou, “Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers,” Appl. Phys. Lett. 77(12), 1816 (2000). [CrossRef]

Electrochem. Solid-State Lett.

Z. H. Cen, T. P. Chen, L. Ding, J. D. Ye, Y. Liu, M. Yang, J. I. Wong, Z. Liu, and S. Fung, “Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions,” Electrochem. Solid-State Lett. 12(2), H38–H40 (2009). [CrossRef]

IEEE Trans. Electron. Dev.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, Z. Liu, M. Yang, J. I. Wong, W. P. Goh, F. R. Zhu, and S. Fung, “Quenching and reaction of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film,” IEEE Trans. Electron. Dev. 56(12), 3212–3217 (2009). [CrossRef]
L. Ding, T. P. Chen, M. Yang, J. I. Wong, Z. H. Cen, Y. Liu, F. R. Zhu, and A. A. Tseng, “Relationship between current transport and electroluminescence in Si+-implanted SiO2 thin films,” IEEE Trans. Electron. Dev. 56(11), 2785–2791 (2009). [CrossRef]

J. Appl. Phys.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008). [CrossRef]
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing,” J. Appl. Phys. 105(12), 123101 (2009). [CrossRef]

Phys. Rev. Lett.

H. E. Romero and M. Drndic, “Coulomb blockade and hopping conduction in PbSe quantum dots,” Phys. Rev. Lett. 95(15), 156801 (2005). [CrossRef] [PubMed]

Solid-State Electron.

R. H. Yeh, W. H. Liu, S. Y. Lo, and J. W. Hong, “Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p-i-n thin-film LEDs fabricated on c-Si,” Solid-State Electron. 50(9), 1495–1500 (2006). [CrossRef]

Other

J. F. Ziegler, J. P. Biersach, and U. Littmark, SRIM (Pergamon, New York, 2006). www.srim.org .

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[1] K. S. Cho, N.-M. Park, T.-Y. Kim, K.-H. Kim, G. Y. Sung, and J. H. Shin, “High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer,” Appl. Phys. Lett. 86(7), 071909 (2005). [CrossRef]

[2] L.-Y. Chen, W.-H. Chen, and F. C.-N. Hong, “Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix,” Appl. Phys. Lett. 86(19), 193506 (2005). [CrossRef]

[3] L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from silicon-rich nitride nanostructures,” Appl. Phys. Lett. 88(18), 183103 (2006). [CrossRef]

[4] M. H. Wang, D. S. Li, Z. Z. Yuan, D. R. Yang, and D. L. Que, “Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007). [CrossRef]

[5] Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett. 94(4), 041102 (2009). [CrossRef]

[6] Z. W. Pei, Y. R. Chang, and H. L. Hwang, “White electroluminescence from hydrogenated amorphous-SiNx thin films,” Appl. Phys. Lett. 80(16), 2839–2841 (2002). [CrossRef]

[7] H. P. Dong, D. Q. Wang, K. J. Chen, J. Huang, H. C. Sun, W. Li, J. Xu, and Z. Y. Ma, “Field dependent electroluminescence from amorphous Si/SiNx multilayer structure,” Appl. Phys. Lett. 94(16), 161101 (2009). [CrossRef]

[8] Z. H. Cen, T. P. Chen, L. Ding, J. D. Ye, Y. Liu, M. Yang, J. I. Wong, Z. Liu, and S. Fung, “Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions,” Electrochem. Solid-State Lett. 12(2), H38–H40 (2009). [CrossRef]

[9] Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing,” J. Appl. Phys. 105(12), 123101 (2009). [CrossRef]

[10] J. F. Ziegler, J. P. Biersach, and U. Littmark, SRIM (Pergamon, New York, 2006). www.srim.org .

[11] K. Kalinowski, P. Di Marco, M. Cocchi, V. Fattori, N. Camaioni, and J. Duff, “Voltage-tunable-color multilayer organic light emitting diode,” Appl. Phys. Lett. 68(17), 2317 (1996). [CrossRef]

[12] R. H. Yeh, W. H. Liu, S. Y. Lo, and J. W. Hong, “Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p-i-n thin-film LEDs fabricated on c-Si,” Solid-State Electron. 50(9), 1495–1500 (2006). [CrossRef]

[13] H. E. Romero and M. Drndic, “Coulomb blockade and hopping conduction in PbSe quantum dots,” Phys. Rev. Lett. 95(15), 156801 (2005). [CrossRef] [PubMed]

[14] Y. Liu, T. P. Chen, H. W. Lau, J. I. Wong, L. Ding, S. Zhang, and S. Fung, “Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals,” Appl. Phys. Lett. 89(12), 123101 (2006). [CrossRef]

[15] L. Ding, T. P. Chen, M. Yang, J. I. Wong, Z. H. Cen, Y. Liu, F. R. Zhu, and A. A. Tseng, “Relationship between current transport and electroluminescence in Si+-implanted SiO2 thin films,” IEEE Trans. Electron. Dev. 56(11), 2785–2791 (2009). [CrossRef]

[16] J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett. 44(4), 415–417 (1984). [CrossRef]

[17] M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008). [CrossRef]

[18] S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si Metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett. 90(18), 181121 (2007). [CrossRef]

[19] P. Photopoulos and A. G. Nassipoulou, “Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers,” Appl. Phys. Lett. 77(12), 1816 (2000). [CrossRef]

[20] Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, Z. Liu, M. Yang, J. I. Wong, W. P. Goh, F. R. Zhu, and S. Fung, “Quenching and reaction of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film,” IEEE Trans. Electron. Dev. 56(12), 3212–3217 (2009). [CrossRef]

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Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film

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Abstract

References

Appl. Phys. Lett.

Electrochem. Solid-State Lett.

IEEE Trans. Electron. Dev.

J. Appl. Phys.

Phys. Rev. Lett.

Solid-State Electron.

Other

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