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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1070–1075

25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode

Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 1070-1075 (2010)

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We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than −12 dB.

© 2010 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: November 20, 2009
Revised Manuscript: December 17, 2009
Manuscript Accepted: December 23, 2009
Published: January 7, 2010

Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers, "25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode," Opt. Express 18, 1070-1075 (2010)

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  1. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express 15(2), 430–436 (2007). [CrossRef] [PubMed]
  2. A. S. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007). [CrossRef] [PubMed]
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  9. S. Akiyama, H. Itoh, S. Sekiguchi, S. Hirose, T. Takeuchi, A. Kuramata, and T. Yamamoto, “InP-Based Mach-Zehnder Modulator With Capacitively Loaded Traveling-Wave Electrodes,” IEEE Lightwave Technol. 26(5), 608–615 (2008). [CrossRef]
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