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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1070–1075

25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode

Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers  »View Author Affiliations


Optics Express, Vol. 18, Issue 2, pp. 1070-1075 (2010)
http://dx.doi.org/10.1364/OE.18.001070


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Abstract

We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than −12 dB.

© 2010 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: November 20, 2009
Revised Manuscript: December 17, 2009
Manuscript Accepted: December 23, 2009
Published: January 7, 2010

Citation
Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers, "25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode," Opt. Express 18, 1070-1075 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-2-1070


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References

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