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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1398–1405

InGaZnO semiconductor thin film fabricated using pulsed laser deposition

Jiangbo Chen, Li Wang, Xueqiong Su, Le Kong, Guoqing Liu, and Xinping Zhang  »View Author Affiliations


Optics Express, Vol. 18, Issue 2, pp. 1398-1405 (2010)
http://dx.doi.org/10.1364/OE.18.001398


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Abstract

The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga2O3, In2O3, and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

© 2010 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

History
Original Manuscript: October 30, 2009
Revised Manuscript: December 11, 2009
Manuscript Accepted: December 11, 2009
Published: January 12, 2010

Citation
Jiangbo Chen, Li Wang, Xueqiong Su, Le Kong, Guoqing Liu, and Xinping Zhang, "InGaZnO semiconductor thin film fabricated using pulsed laser deposition," Opt. Express 18, 1398-1405 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-2-1398


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