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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1462–1468

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO2

Chu-Young Cho, Jin-Bock Lee, Sang-Jun Lee, Sang-Heon Han, Tae-Young Park, Je Won Kim, Yong Chun Kim, and Seong-Ju Park  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 1462-1468 (2010)

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We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO2 mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO2 LEO mask.

© 2010 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Optical Devices

Original Manuscript: October 6, 2009
Revised Manuscript: November 14, 2009
Manuscript Accepted: November 14, 2009
Published: January 12, 2010

Chu-Young Cho, Jin-Bock Lee, Sang-Jun Lee, Sang-Heon Han, Tae-Young Park, Je Won Kim, Yong Chun Kim, and Seong-Ju Park, "Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO2," Opt. Express 18, 1462-1468 (2010)

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