OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1756–1761

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout  »View Author Affiliations


Optics Express, Vol. 18, Issue 2, pp. 1756-1761 (2010)
http://dx.doi.org/10.1364/OE.18.001756


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Abstract

InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40μm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.

© 2010 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Detectors

History
Original Manuscript: September 17, 2009
Revised Manuscript: December 27, 2009
Manuscript Accepted: January 8, 2010
Published: January 14, 2010

Citation
Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout, "InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides," Opt. Express 18, 1756-1761 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-2-1756


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