OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 1756–1761

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 1756-1761 (2010)

View Full Text Article

Enhanced HTML    Acrobat PDF (196 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40μm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.

© 2010 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:

Original Manuscript: September 17, 2009
Revised Manuscript: December 27, 2009
Manuscript Accepted: January 8, 2010
Published: January 14, 2010

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout, "InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides," Opt. Express 18, 1756-1761 (2010)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. R. Soref and J. Lorenzo, “All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 μm,” IEEE J. Quantum Electron. 22(6), 873–879 (1986). [CrossRef]
  2. R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987). [CrossRef]
  3. W. Bogaerts, D. Taillaert, B. Luyssaert, P. Dumon, J. Van Campenhout, P. Bienstman, D. Van Thourhout, R. Baets, V. Wiaux, and S. Beckx, “Basic structures for photonic integrated circuits in Silicon-on-insulator,” Opt. Express 12(8), 1583–1591 (2004). [CrossRef] [PubMed]
  4. T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. Sel. Top. Quantum Electron. 11(1), 232–240 (2005). [CrossRef]
  5. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature 433(7023), 292–294 (2005). [CrossRef] [PubMed]
  6. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
  7. G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, “Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit,” Opt. Express 14(18), 8154–8159 (2006). [CrossRef] [PubMed]
  8. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004). [CrossRef] [PubMed]
  9. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005). [CrossRef] [PubMed]
  10. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö. Ilday, F. X. Kärtner, and J. Yasaitis, “High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform,” Appl. Phys. Lett. 87(10), 103501 (2005). [CrossRef]
  11. G. Roelkens, J. Brouckaert, D. Taillaert, P. Dumon, W. Bogaerts, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, “Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits,” Opt. Express 13(25), 10102–10108 (2005). [CrossRef] [PubMed]
  12. G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, “Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit,” Opt. Express 14(18), 8154–8159 (2006). [CrossRef] [PubMed]
  13. M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
  14. T. Maruyama, T. Okumura, and S. Arai, “Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate,” Jpn. J. Appl. Phys. 45(11), 8717–8718 (2006). [CrossRef]
  15. G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, “Adhesive Bonding of InP/InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene,” J. Electrochem. Soc. 153(12), G1015–G1019 (2006). [CrossRef]
  16. I. Christiaens, G. Roelkens, K. De Mesel, D. Van Thourhout, and R. Baets, “Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding,” J. Lightwave Technol. 23(2), 517–523 (2005). [CrossRef]
  17. A. Jourdain, P. De Moor, K. Baert, I. De Wolf, and H. A. C. Tilmans, “Mechanical and electrical characterization of BCB as a bond and seal material for cavities housing (RF-) MEMS devices,” J. Micromech. Microeng. 15(7), S89–96 (2005). [CrossRef]
  18. M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005). [CrossRef]
  19. L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008). [CrossRef] [PubMed]
  20. L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009). [CrossRef] [PubMed]
  21. L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17(8), 6252–6257 (2009). [CrossRef] [PubMed]
  22. D. Taillaert, F. Van Laere, M. Ayre, W. Bogaerts, D. Van Thourhout, P. Bienstman, and R. Baets, “Grating couplers for coupling between optical fibers and nanophotonic waveguides,” Jpn. J. Appl. Phys. 45
(No. 8A), 6071–6077 (2006). [CrossRef]
  23. J. Bowers and C. A. Burrus, “Ultrawide-band long-wavelength p-i-n photodetectors,” J. Lightwave Technol. 5(10), 1339–1350 (1987). [CrossRef]
  24. M. R. Amersfoort, M. K. Smit, Y. S. Oei, I. Moerman, and P. Demeester, “Simple method for predicting absorption resonances of evanescently-coupled waveguide photodetectors,” in Proceedings of 6th European Conference on Integrated Optics, (Neuchitel, Switzerland, 1993), pp. 2–40–2–41.
  25. Z. Sheng, L. Liu, J. Brouckaert, S. He, D. Van Thourhout, and R. Baets, “Investigation of evanescent coupling between SOI waveguides and heterogeneously-integrated III-V pin photodetectors,” in Proceedings of 21st IEEE International Conference on Indium Phosphide & Related Materials, (IEEE, Newport Beach, CA, 2009), pp. 159–162.
  26. H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent waveguide photodetector,” Opt. Express 15(10), 6044–6052 (2007). [CrossRef] [PubMed]
  27. J. Brouckaert, G. Roelkens, D. Van Thourhout, and R. Baets, “Compact InAlAs–InGaAs metal–semiconductor–metal photodetectors integrated on silicon-on-insulator waveguides,” IEEE Photon. Technol. Lett. 19(19), 1484–1486 (2007). [CrossRef]
  28. W. Bogaerts, P. Dumon, D. Van Thourhout, D. Taillaert, P. Jaenen, J. Wouters, S. Beckx, V. Wiaux, and R. Baets, “Compact wavelength-selective functions in silicon-on-insulator photonic wires,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1394–1401 (2006). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3
Fig. 4 Fig. 5

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited