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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 773–779

Fabrication and characterization of freestanding circular GaN gratings

Yongjin Wang, Fangren Hu, Hidehisa Sameshima, and Kazuhiro Hane  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 773-779 (2010)

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It’s of significant interest to combine freestanding nanostructure with active gallium nitride (GaN) material for surface-emitting optoelectronic application. By utilizing bulk micromachining of silicon, we demonstrate here a promising way to fabricate freestanding GaN nanostructures using a GaN-on-silicon system. The well-defined nanoscale circular GaN gratings are realized by fast-atom beam (FAB) etching, and the freestanding GaN gratings are obtained by removing silicon substrate using deep reactive ion etching (DRIE). The freestanding GaN slab is thinned from the backside by FAB etching to reduce the confined modes inside the GaN slab. The measured microphotoluminescence (micro-PL) spectra experimentally demonstrate significant enhancements in peak intensity and integrated intensity by introducing freestanding circular grating. This work represents an important step in combining GaN-based active material with freestanding nanostructures for further increasing light-extraction efficiency.

© 2010 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Diffraction and Gratings

Original Manuscript: August 24, 2009
Revised Manuscript: October 27, 2009
Manuscript Accepted: November 3, 2009
Published: January 6, 2010

Yongjin Wang, Fangren Hu, Hidehisa Sameshima, and Kazuhiro Hane, "Fabrication and characterization of freestanding circular GaN gratings," Opt. Express 18, 773-779 (2010)

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