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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 885–892

Enhanced Electro-Optic Phase Shifts in Suspended Waveguides

T. H. Stievater, D. Park, W. S. Rabinovich, M. W. Pruessner, S. Kanakaraju, C. J. K. Richardson, and J. B. Khurgin  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 885-892 (2010)

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We demonstrate enhanced electro-optic phase shifts in suspended InGaAs/InGaAsP quantum well waveguides compared to attached waveguides. The enhancement stems from an improved overlap between the optical mode and the multiple quantum well layers in thin waveguides when the semiconductor material beneath the waveguide is selectively etched. The measured voltage length product is 0.41 V-cm and the measured propagation loss is 2.3 ± 0.7 dB/cm for the TE mode in the optical L-band.

© 2010 Optical Society of America

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials
(230.3990) Optical devices : Micro-optical devices

ToC Category:
Optical Devices

Original Manuscript: October 27, 2009
Revised Manuscript: December 17, 2009
Manuscript Accepted: December 17, 2009
Published: January 6, 2010

T. H. Stievater, D. Park, W. S. Rabinovich, M. W. Pruessner, S. Kanakaraju, C. J. Richardson, and J. B. Khurgin, "Enhanced electro-optic phase shifts in suspended waveguides," Opt. Express 18, 885-892 (2010)

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