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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 2 — Jan. 18, 2010
  • pp: 917–922

Improved emission efficiency of electroluminescent device containing nc-Si/SiO2 multilayers by using nano-patterned substrate

Deyuan Chen, Yu Liu, Jun Xu, Deyuan Wei, Hongcheng Sun, Ling Xu, Tao Wang, Wei Li, and Kunji Chen  »View Author Affiliations

Optics Express, Vol. 18, Issue 2, pp. 917-922 (2010)

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Nanocrystalline Si/SiO2 multilayers-based electroluminescent devices were prepared on nano-patterned p-Si substrates which were fabricated by nano-sphere lithography technique. The formed nano-patterned substrate contains periodic Si nano-cone arrays with the height of 80~95 nm and the diameter around 220 nm. The turn-on voltage of the luminescent device prepared on nano-patterned substrate is 3 V while the electroluminescence intensity is increased by over one order of magnitude compared to that of device prepared on flat substrate. The enhancement of the light emission can be attributed to the improved extraction efficiency of emission light as well as the high carrier-injection efficiency.

© 2010 OSA

OCIS Codes
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: November 11, 2009
Revised Manuscript: December 18, 2009
Manuscript Accepted: December 23, 2009
Published: January 6, 2010

Deyuan Chen, Yu Liu, Jun Xu, Deyuan Wei, Hongcheng Sun, Ling Xu, Tao Wang, Wei Li, and Kunji Chen, "Improved emission efficiency of electroluminescent device containing nc-Si/SiO2 multilayers by using nano-patterned substrate," Opt. Express 18, 917-922 (2010)

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