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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 21551–21556

Enhancement of passively Q-switched performance at 1.34 μm with a class of Nd:GdxY1-xVO4 crystals

Xin Li, Guiqiu Li, Shengzhi Zhao, Chao Xu, Yufei Li, Hong Liu, and Huaijin Zhang  »View Author Affiliations

Optics Express, Vol. 18, Issue 21, pp. 21551-21556 (2010)

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Passively Q-switched operation at 1.34 μm in which V:YAG was employed as saturable absorber has been demonstrated with a series of mixed Nd:Gd x Y1- x VO4 crystals. The Q-switched laser pulse performance with these Nd-doped mixed vanadate crystals, especially Nd:Gd0.63Y0.37VO4, was enhanced in respect to Nd:GdVO4 under the identical conditions. The average output power of 171.3 mW with the shortest pulse width of 44.4 ns, largest single pulse energy of 21.7 μJ, and highest peak power of 489 W at the incident pump power of 5.04 W were obtained with Nd:Gd0.63Y0.37VO4 crystal.

© 2010 OSA

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

Original Manuscript: July 14, 2010
Revised Manuscript: September 1, 2010
Manuscript Accepted: September 10, 2010
Published: September 27, 2010

Xin Li, Guiqiu Li, Shengzhi Zhao, Chao Xu, Yufei Li, Hong Liu, and Huaijin Zhang, "Enhancement of passively Q-switched performance at 1.34 μm with a class of Nd:GdxY1-xVO4 crystals," Opt. Express 18, 21551-21556 (2010)

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