© 2010 OSA

1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
2. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
3. L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
4. T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
5. T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
6. J. Rautiainen, I. Krestnikov, M. Butkus, E. U. Rafailov, and O. G. Okhotnikov, “Optically pumped semiconductor quantum dot disk laser operating at 1180 nm,” Opt. Lett. 35(5), 694–696 (2010). [PubMed]
7. J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010). [PubMed]
8. M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
9. A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
10. J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009), pp. 1.
11. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009). [PubMed]
12. J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
13. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008). [PubMed]
14. E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009). [PubMed]
15. L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, “Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling,” Appl. Phys. Lett. 88(25), 251 117–251 117 (2006).
16. J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
17. S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
18. M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
19. J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).
20. M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008). [PubMed]
21. S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004). [PubMed]
22. M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006). [PubMed]
23. M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).
24. J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005). [PubMed]
25. L. Morton, J. Hastie, M. Dawson, A. Krysa, and J. Roberts, “1W CW Red VECSEL Frequency-Doubled to Generate 60mW in the Ultraviolet,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2006 and the European Quantum Electronics Conference (Long Beach, California, 2006), pp. 1.
26. J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
27. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
28. Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
29. R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

Angew. Chem. Int. Ed. Engl.

• M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008). [PubMed]

Appl. Phys. Lett.

• Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
• L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
• J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Clin. Dermatol.

• M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006). [PubMed]

Electron. Lett.

• J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
• A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

IEEE J. Quantum Electron.

• R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

IEEE J. Sel. Top. Quantum Electron.

• T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

IEEE Photon. Technol. Lett.

• M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
• J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
• A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
• M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

J. Cryst. Growth

• T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Lancet Oncol.

• S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004). [PubMed]

Laser Photonics Rev.

• N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Model. Simul. Mater. Sci. Eng.

• M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).

Opt. Express

• J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009). [PubMed]
• J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008). [PubMed]
• J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005). [PubMed]

Opt. Lett.

• E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009). [PubMed]
• J. Rautiainen, I. Krestnikov, M. Butkus, E. U. Rafailov, and O. G. Okhotnikov, “Optically pumped semiconductor quantum dot disk laser operating at 1180 nm,” Opt. Lett. 35(5), 694–696 (2010). [PubMed]
• J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010). [PubMed]

Proc. SPIE

• S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
• M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).
• J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Other

• L. Morton, J. Hastie, M. Dawson, A. Krysa, and J. Roberts, “1W CW Red VECSEL Frequency-Doubled to Generate 60mW in the Ultraviolet,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2006 and the European Quantum Electronics Conference (Long Beach, California, 2006), pp. 1.
• L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, “Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling,” Appl. Phys. Lett. 88(25), 251 117–251 117 (2006).
• J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009), pp. 1.

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