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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 21645–21650

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Antti Rantamäki, Alexei Sirbu, Alexandru Mereuta, Eli Kapon, and Oleg G. Okhotnikov  »View Author Affiliations


Optics Express, Vol. 18, Issue 21, pp. 21645-21650 (2010)
http://dx.doi.org/10.1364/OE.18.021645


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Abstract

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.

© 2010 OSA

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.2620) Nonlinear optics : Harmonic generation and mixing

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 19, 2010
Revised Manuscript: September 21, 2010
Manuscript Accepted: September 23, 2010
Published: September 29, 2010

Citation
Antti Rantamäki, Alexei Sirbu, Alexandru Mereuta, Eli Kapon, and Oleg G. Okhotnikov, "3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser," Opt. Express 18, 21645-21650 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-21-21645


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