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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 21743–21749

Abnormal polarization switching phenomenon in a-plane AlxGa1-xN

Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu, and Tien-Chang Lu  »View Author Affiliations

Optics Express, Vol. 18, Issue 21, pp. 21743-21749 (2010)

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The optical polarization properties of a-plane Al x Ga1- x N films have been investigated by polarization-dependent photoluminescence (PL). The degree of polarization decreased with increasing the Al composition, and the main optical polarization direction switched from ε c to ε / / c at about x = 0.07 due to the valence band switching, representing that the optical transition energy of ε / / c is surpassing that of ε c . However, with the Al composition larger than x = 0.1, the higher energy optical transitions of ε / / c exhibited the stronger PL intensity, opposite to the normal situations that higher energy states commonly have weaker PL intensity than the lower energy states. We utilized the 6 × 6 k.p model and the lambertian-like radiation pattern assumption to explain this abnormal optical polarization switching behavior in the a-plane Al x Ga1- x N layers and obtained good agreement with the experimental results.

© 2010 OSA

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(260.5430) Physical optics : Polarization

ToC Category:

Original Manuscript: May 3, 2010
Revised Manuscript: June 21, 2010
Manuscript Accepted: June 23, 2010
Published: September 29, 2010

Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu, and Tien-Chang Lu, "Abnormal polarization switching phenomenon in a-plane AlxGa1-xN," Opt. Express 18, 21743-21749 (2010)

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