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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 21777–21783

Tunable oscillating lateral photovoltaic effect in surface-patterned metal-semiconductor structures

C. Q. Yu and H. Wang  »View Author Affiliations


Optics Express, Vol. 18, Issue 21, pp. 21777-21783 (2010)
http://dx.doi.org/10.1364/OE.18.021777


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Abstract

The linear output of lateral photovoltage (LPV) with light position is the main feature of conventional lateral photovoltaic effect (LPE), which can be used to detect small displacement. In this study, we report a novel oscillating LPE in a surface-patterned metal-semiconductor structure, which can be well manipulated by the metal thickness and the comb properties. Compared with the conventional linear LPE, this oscillating LPE not only contributes a considerable higher sensitivity of LPV along the lateral direction, but also shows a distinguishable response to the vertical direction, indicating a new way of detecting two-dimensional displacement with much higher precision.

© 2010 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Detectors

History
Original Manuscript: July 12, 2010
Revised Manuscript: August 14, 2010
Manuscript Accepted: August 18, 2010
Published: September 29, 2010

Citation
C. Q. Yu and H. Wang, "Tunable oscillating lateral photovoltaic effect in surface-patterned metal-semiconductor structures," Opt. Express 18, 21777-21783 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-21-21777


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