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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 22485–22496

Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator

Sophie Schönenberger, Thilo Stöferle, Nikolaj Moll, Rainer F. Mahrt, Marcus S. Dahlem, Thorsten Wahlbrink, Jens Bolten, Thomas Mollenhauer, Heinrich Kurz, and Bert J. Offrein  »View Author Affiliations

Optics Express, Vol. 18, Issue 21, pp. 22485-22496 (2010)

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We demonstrate an all-optical switch based on a waveguide-embedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed switching power required for a 3 dB modulation depth is measured to be as low as 6 fJ. While the switch-on time is on the order of a few picoseconds, the relaxation time is almost 500 ps and limited by the lifetime of the charge carriers.

© 2010 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(230.1150) Optical devices : All-optical devices
(230.5750) Optical devices : Resonators
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

Original Manuscript: August 2, 2010
Revised Manuscript: September 24, 2010
Manuscript Accepted: September 30, 2010
Published: October 8, 2010

Sophie Schönenberger, Thilo Stöferle, Nikolaj Moll, Rainer F. Mahrt, Marcus S. Dahlem, Thorsten Wahlbrink, Jens Bolten, Thomas Mollenhauer, Heinrich Kurz, and Bert J. Offrein, "Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator," Opt. Express 18, 22485-22496 (2010)

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