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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 22833–22841

Midwave thermal infrared detection using semiconductor selective absorption

Ryan P. Shea, Anand S. Gawarikar, and Joseph J. Talghader  »View Author Affiliations

Optics Express, Vol. 18, Issue 22, pp. 22833-22841 (2010)

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The performance of thermal detectors is derived for devices incorporating materials with non-uniform spectral absorption. A detector designed to have low absorption in the primary thermal emission band at a given temperature will have a background-limited radiation noise well below that of a blackbody absorber, which is the condition typically assessed for ultimate thermal detector performance. Specific examples of mid-wave infrared (λ ∼ 3–5μm) devices are described using lead selenide as a primary absorber with optical cavity layers that maximize coupling. An analysis of all significant noise sources is presented for two example room-temperature devices designed to have detectivities up to 4.37×1010 cm Hz1/2 W−1, which is a factor 3.1 greater than the traditional blackbody limit. An alternative method of fabricating spectrally selective devices by patterning a plasmonic structure in silver is also considered.

© 2010 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.6808) Detectors : Thermal (uncooled) IR detectors, arrays and imaging

ToC Category:

Original Manuscript: August 26, 2010
Revised Manuscript: September 30, 2010
Manuscript Accepted: October 4, 2010
Published: October 13, 2010

Ryan P. Shea, Anand S. Gawarikar, and Joseph J. Talghader, "Midwave thermal infrared detection using semiconductor selective absorption," Opt. Express 18, 22833-22841 (2010)

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