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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 22944–22957

Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films

P. Němec, S. Zhang, V. Nazabal, K. Fedus, G. Boudebs, A. Moreac, M. Cathelinaud, and X.-H. Zhang  »View Author Affiliations


Optics Express, Vol. 18, Issue 22, pp. 22944-22957 (2010)
http://dx.doi.org/10.1364/OE.18.022944


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Abstract

Quest for photo-stable amorphous thin films in ternary GexAsySe100-x-y chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge20As20Se60 composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.

© 2010 OSA

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(300.6450) Spectroscopy : Spectroscopy, Raman
(310.6860) Thin films : Thin films, optical properties
(350.3390) Other areas of optics : Laser materials processing
(160.5335) Materials : Photosensitive materials

ToC Category:
Thin Films

History
Original Manuscript: July 23, 2010
Revised Manuscript: September 28, 2010
Manuscript Accepted: September 30, 2010
Published: October 14, 2010

Citation
P. Němec, S. Zhang, V. Nazabal, K. Fedus, G. Boudebs, A. Moreac, M. Cathelinaud, and X.-H. Zhang, "Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films," Opt. Express 18, 22944-22957 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-22-22944


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