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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 23079–23087

High bandwidth on-chip silicon photonic interleaver

Lian-Wee Luo, Salah Ibrahim, Arthur Nitkowski, Zhi Ding, Carl B. Poitras, S. J. Ben Yoo, and Michal Lipson  »View Author Affiliations

Optics Express, Vol. 18, Issue 22, pp. 23079-23087 (2010)

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We demonstrate a 120 GHz 3-dB bandwidth on-chip silicon photonic interleaver with a flat passband over a broad spectral range of 70 nm. The structure of the interleaver is based on an asymmetric Mach-Zehnder interferometer (MZI) with 3 ring resonators coupled to the arms of the MZI. The transmission spectra of this device depict a rapid roll-off on the band edges, where the 20-dB bandwidth is measured to be 142 GHz. This device is optimized for operation in the C-band with a channel crosstalk as low as −20 dB. The device also has full reconfiguration capability to compensate for fabrication imperfections.

© 2010 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(250.5300) Optoelectronics : Photonic integrated circuits
(130.7408) Integrated optics : Wavelength filtering devices

ToC Category:
Integrated Optics

Original Manuscript: August 17, 2010
Revised Manuscript: October 1, 2010
Manuscript Accepted: October 1, 2010
Published: October 18, 2010

Lian-Wee Luo, Salah Ibrahim, Arthur Nitkowski, Zhi Ding, Carl B. Poitras, S. J. Ben Yoo, and Michal Lipson, "High bandwidth on-chip silicon photonic interleaver," Opt. Express 18, 23079-23087 (2010)

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