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Impacts of cost functions on inverse lithography patterning |
Optics Express, Vol. 18, Issue 22, pp. 23331-23342 (2010)
http://dx.doi.org/10.1364/OE.18.023331
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Abstract
For advanced CMOS processes, inverse lithography promises better patterning fidelity than conventional mask correction techniques due to a more complete exploration of the solution space. However, the success of inverse lithography relies highly on customized cost functions whose design and know-how have rarely been discussed. In this paper, we investigate the impacts of various objective functions and their superposition for inverse lithography patterning using a generic gradient descent approach. We investigate the most commonly used objective functions, which are the resist and aerial images, and also present a derivation for the aerial image contrast. We then discuss the resulting pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. We show that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can achieve a good mask correction and contour targets when using inverse lithography patterning.
© 2010 OSA
OCIS Codes
(100.3190) Image processing : Inverse problems
(110.3960) Imaging systems : Microlithography
(110.1758) Imaging systems : Computational imaging
(110.3010) Imaging systems : Image reconstruction techniques
ToC Category:
Imaging Systems
History
Original Manuscript: August 23, 2010
Revised Manuscript: October 11, 2010
Manuscript Accepted: October 15, 2010
Published: October 20, 2010
Citation
Jue-Chin Yu and Peichen Yu, "Impacts of cost functions on inverse lithography patterning," Opt. Express 18, 23331-23342 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-22-23331
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