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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 23406–23412

InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process

Kuei-Ting Chen, Wan-Chun Huang, Tsung-Han Hsieh, Chang-Hua Hsieh, and Chia-Feng Lin  »View Author Affiliations

Optics Express, Vol. 18, Issue 22, pp. 23406-23412 (2010)

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InGaN-based light-emitting solar cell (LESC) structure with an inverted pyramidal structure at GaN/sapphire interface was fabricated through a laser decomposition process and a wet crystallographic etching process. The highest light output power of the laser-treated LESC structure, with a 56% backside roughened-area ratio, had a 75% enhancement compared to the conventional device at a 20 mA operating current. By increasing the backside roughened area, the cutoff wavelength of the transmittance spectra and the wavelength of the peak photovoltaic efficiency had a redshift phenomenon that could be caused by increasing the light absorption at InGaN active layer.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optical Devices

Original Manuscript: July 22, 2010
Revised Manuscript: August 31, 2010
Manuscript Accepted: August 31, 2010
Published: October 21, 2010

Kuei-Ting Chen, Wan-Chun Huang, Tsung-Han Hsieh, Chang-Hua Hsieh, and Chia-Feng Lin, "InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process," Opt. Express 18, 23406-23412 (2010)

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