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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 23 — Nov. 8, 2010
  • pp: 23562–23568

Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability

Ming-Chun Tien, Jared F. Bauters, Martijn J. R. Heck, Daniel J. Blumenthal, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 18, Issue 23, pp. 23562-23568 (2010)

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We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell’s wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase modulation shows agreement with the theoretical calculation. The waveguide with 2.8-μm wide and 80-nm thick Si3N4 core has low loss and high power handling capability, with an effective n2 of about 9 × 10 16 cm2/W.

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OCIS Codes
(190.3270) Nonlinear optics : Kerr effect
(260.2065) Physical optics : Effective medium theory
(250.4390) Optoelectronics : Nonlinear optics, integrated optics

ToC Category:
Integrated Optics

Original Manuscript: August 17, 2010
Revised Manuscript: October 22, 2010
Manuscript Accepted: October 22, 2010
Published: October 26, 2010

Ming-Chun Tien, Jared F. Bauters, Martijn J. R. Heck, Daniel J. Blumenthal, and John E. Bowers, "Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability," Opt. Express 18, 23562-23568 (2010)

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