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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 23 — Nov. 8, 2010
  • pp: 24189–24194

A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product

Myung-Jae Lee and Woo-Young Choi  »View Author Affiliations

Optics Express, Vol. 18, Issue 23, pp. 24189-24194 (2010)

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We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.

© 2010 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(200.0200) Optics in computing : Optics in computing
(200.4650) Optics in computing : Optical interconnects
(230.0040) Optical devices : Detectors
(230.0230) Optical devices : Optical devices
(230.5160) Optical devices : Photodetectors
(230.5170) Optical devices : Photodiodes
(250.0250) Optoelectronics : Optoelectronics
(040.1345) Detectors : Avalanche photodiodes (APDs)
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: September 15, 2010
Revised Manuscript: October 13, 2010
Manuscript Accepted: October 19, 2010
Published: November 3, 2010

Myung-Jae Lee and Woo-Young Choi, "A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product," Opt. Express 18, 24189-24194 (2010)

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