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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 24 — Nov. 22, 2010
  • pp: 25225–25231

Submilliwatt, ultrafast and broadband electro-optic silicon switches

Po Dong, Shirong Liao, Hong Liang, Roshanak Shafiiha, Dazeng Feng, Guoliang Li, Xuezhe Zheng, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 18, Issue 24, pp. 25225-25231 (2010)
http://dx.doi.org/10.1364/OE.18.025225


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Abstract

We present a broadband 2x2 electro-optic silicon switch with an ultralow switching power and fast switching time based on a Mach-Zehnder interferometer (MZI). Forward-biased p-i-n junctions are employed to tune the phase of silicon waveguides in the MZI, to achieve a π-phase switching power of 0.6 mW with a drive voltage 0.83 V with a MZI arm length of 4 mm. The 10%-90% switching time is demonstrated to be 6 ns. Optical crosstalk levels lower than −17 dB are obtained for an optical bandwidth of 60 nm. The free carrier induced silicon refractive index change is extracted from the experimental results for the concentration range from 1016 to 1017 cm−3. We find that at the concentration of 1016 cm−3, the index change is about twice that calculated by the commonly used index change equation.

© 2010 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(230.3120) Optical devices : Integrated optics devices
(130.4815) Integrated optics : Optical switching devices
(250.6715) Optoelectronics : Switching

ToC Category:
Integrated Optics

History
Original Manuscript: September 21, 2010
Revised Manuscript: November 9, 2010
Manuscript Accepted: November 10, 2010
Published: November 17, 2010

Citation
Po Dong, Shirong Liao, Hong Liang, Roshanak Shafiiha, Dazeng Feng, Guoliang Li, Xuezhe Zheng, Ashok V. Krishnamoorthy, and Mehdi Asghari, "Submilliwatt, ultrafast and broadband electro-optic silicon switches," Opt. Express 18, 25225-25231 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-24-25225


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