11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

doi:10.1364/OE.18.025633

11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, and Mircea D. Guina »View Author Affiliations

Optics Express, Vol. 18, Issue 25, pp. 25633-25641 (2010)
http://dx.doi.org/10.1364/OE.18.025633

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Abstract

We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 20, 2010
Revised Manuscript: November 5, 2010
Manuscript Accepted: November 14, 2010
Published: November 23, 2010

Citation
Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, and Mircea D. Guina, "11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18, 25633-25641 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-25-25633

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References

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997). [CrossRef]
N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008). [CrossRef]
S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009). [CrossRef]
J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004). [CrossRef]
S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008). [CrossRef]
V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009). [CrossRef]
L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007). [CrossRef]
M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997). [CrossRef]
J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007). [CrossRef] [PubMed]
T. Leinonen, A. Härkönen, V.-M. Korpijärvi, M. Guina, R.J. Epstein, J.T. Murray, and G.J. Fetzer, “High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm,” SPIE Photon. Europe Proc. 7720, 772016–1–772016–7, 12– 16 April 2010, Brussels.
M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext . [CrossRef]
C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990). [PubMed]
C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005). [CrossRef] [PubMed]
C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997). [CrossRef]
D. B. Calia, Y. Feng, W. Hackenberg, R. Holzlöhner, L. Taylor, and S. Lewis, “Laser development for sodium laser guide stars at ESO”, The Messenger, 139, 12–19 (2009), http://www.eso.org/sci/publications/messenger/archive/no.139-mar10/messenger-no139-12-19.pdf .
A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007). [CrossRef]
E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002). [CrossRef]
R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009). [CrossRef]
J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003). [CrossRef]
S. Giet, A. J. Kemp, D. Burns, S. Calvez, M. D. Dawson, S. Suomalainen, A. Härkönen, M. Guina, O. Okhotnikov, and M. Pessa, “Comparison of thermal management techniques for semiconductor disk lasers”, Proceedings SPIE 6871, Solid State Lasers: Technology and Devices, 687115 (2008).

Abram, R.
An, K.
Avicola, K.
Barber, Z. W.
Bedford, R.
Beeman, B. V.
Bissinger, H. D.
Blodi, C. F.
Brase, J. M.
Burns, D.
Calvez, S.
Dawson, M. D.
Diddams, S. A.
Dumitrescu, M.
Erbert, G. V.
Fallahi, M.
Fan, L.
Ferguson, A. I.
Folk, J. C.
Fortier, T. M.
Friedmann, H. W.
Gavel, D. T.
Giesen, A.
Guina, M.
Hader, J.
Hakimi, F.
Härkönen, A.
Hastie, J. E.
Hessenius, C.
Hollberg, L.
Hopkins, J. M.
Hopkins, J.-M.
Hoyt, C. W.
Jeon, C. W.
Jouhti, T.
Kanz, K.
Kitatani, T.
Koch, S.
Kondow, M.
Konttinen, J.
Korpijärvi, V.-M.
Kudrawiec, R.
Kuznetsov, M.
Larson, M. C.
Laukkanen, P.
Leinonen, T.
Li, H.
Li, W.
Liu, M. C.
Macintosh, B.
Max, C. E.
Misiewicz, J.
Moloney, J. V.
Mooradian, A.
Murray, J. T.
Nakahara, K.
Nakatsuka, S.
Neeb, K. P.
Oates, C. W.
Okai, M.
Okhotnikov, O.
Okhotnikov, O. G.
Olivier, S. S.
Pakarinen, J.
Patience, J.
Pavelescu, E.-M.
Peng, C. S.
Pessa, M.
Poloczek, P.
Pulido, J. S.
Puustinen, J.
Rattunde, M.
Rautiainen, J.
Riis, E.
Russell, S. R.
Schulz, N.
Smith, S. A.
Spânulescu, S.
Speiser, J.
Sprague, R.
Stolz, W.
Sun, H. D.
Tukiainen, A.
Tuomisto, P.
Uomi, K.
Vetter, S. L.
Wagner, J.
Waltjen, K. E.
Yazawa, Y.

Appl. Phys. Lett.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007). [CrossRef]
E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002). [CrossRef]
R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997). [CrossRef]

IEEE Photon. Technol. Lett.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997). [CrossRef]
J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003). [CrossRef]

IET Electron. Lett.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004). [CrossRef]
S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008). [CrossRef]

J. Cryst. Growth

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009). [CrossRef]

Laser Photon. Rev.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008). [CrossRef]

Laser Photon.Rev.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009). [CrossRef]

N. J. Phys.

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext . [CrossRef]

Ophthalmology

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990). [PubMed]

Opt. Express

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007). [CrossRef] [PubMed]

Phys. Rev. Lett.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005). [CrossRef] [PubMed]

Science

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997). [CrossRef]

Top. in Quantum Electron.

A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007). [CrossRef]

Other

D. B. Calia, Y. Feng, W. Hackenberg, R. Holzlöhner, L. Taylor, and S. Lewis, “Laser development for sodium laser guide stars at ESO”, The Messenger, 139, 12–19 (2009), http://www.eso.org/sci/publications/messenger/archive/no.139-mar10/messenger-no139-12-19.pdf .
S. Giet, A. J. Kemp, D. Burns, S. Calvez, M. D. Dawson, S. Suomalainen, A. Härkönen, M. Guina, O. Okhotnikov, and M. Pessa, “Comparison of thermal management techniques for semiconductor disk lasers”, Proceedings SPIE 6871, Solid State Lasers: Technology and Devices, 687115 (2008).
T. Leinonen, A. Härkönen, V.-M. Korpijärvi, M. Guina, R.J. Epstein, J.T. Murray, and G.J. Fetzer, “High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm,” SPIE Photon. Europe Proc. 7720, 772016–1–772016–7, 12– 16 April 2010, Brussels.

2009, Calvez, Laser Photon.Rev.
2009, Korpijärvi, J. Cryst. Growth
2009, Guina, N. J. Phys.
2009, Kudrawiec, Appl. Phys. Lett.
2008, Vetter, IET Electron. Lett.
2008, Schulz, Laser Photon. Rev.
2007, Rautiainen, Opt. Express
2007, Fan, Appl. Phys. Lett.
2007, Giesen, Top. in Quantum Electron.
2005, Hoyt, Phys. Rev. Lett.
2004, Hopkins, IET Electron. Lett.
2003, Hastie, IEEE Photon. Technol. Lett.
2002, Pavelescu, Appl. Phys. Lett.
1997, Max, Science
1997, Kuznetsov, IEEE Photon. Technol. Lett.
1997, Kondow, IEEE J. Sel. Top. Quantum Electron.
1990, Blodi, Ophthalmology

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