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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 25 — Dec. 6, 2010
  • pp: 25786–25793

Atomic vapor quantum memory for a photonic polarization qubit

Young-Wook Cho and Yoon-Ho Kim  »View Author Affiliations

Optics Express, Vol. 18, Issue 25, pp. 25786-25793 (2010)

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We report an experimental realization of an atomic vapor quantum memory for the photonic polarization qubit. The performance of the quantum memory for the polarization qubit, realized with electromagnetically-induced transparency in two spatially separated ensembles of warm Rubidium atoms in a single vapor cell, has been characterized with quantum process tomography. The process fidelity better than 0.91 for up to 16 μs of storage time has been achieved.

© 2010 Optical Society of America

OCIS Codes
(210.4680) Optical data storage : Optical memories
(270.1670) Quantum optics : Coherent optical effects
(270.5585) Quantum optics : Quantum information and processing

ToC Category:
Quantum Optics

Original Manuscript: August 10, 2010
Revised Manuscript: October 12, 2010
Manuscript Accepted: November 20, 2010
Published: November 24, 2010

Young-Wook Cho and Yoon-Ho Kim, "Atomic vapor quantum memory for a photonic polarization qubit," Opt. Express 18, 25786-25793 (2010)

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  17. The optical depth d is defined as the off-resonant transmittance, exp(−d), of the EIT spectrum. The experiment was done with a relatively ‘thin’ optical medium to avoid unwanted four-wave mixing processes which could occur at higher optical depth, see Ref. [18]. It should be easier to work with a greater optical depth for Rubidium 87 as the ground state hyperfine splitting is much larger than that of Rubidium 85.
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