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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 25 — Dec. 6, 2010
  • pp: 25999–26006

Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide

J. E. Williams, V. V. Fedorov, D. V. Martyshkin, I. S. Moskalev, R. P. Camata, and S. B. Mirov  »View Author Affiliations

Optics Express, Vol. 18, Issue 25, pp. 25999-26006 (2010)

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We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 µm.

© 2010 OSA

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(160.6990) Materials : Transition-metal-doped materials
(230.7390) Optical devices : Waveguides, planar
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 25, 2010
Revised Manuscript: October 3, 2010
Manuscript Accepted: October 3, 2010
Published: November 30, 2010

J. E. Williams, V. V. Fedorov, D. V. Martyshkin, I. S. Moskalev, R. P. Camata, and S. B. Mirov, "Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide," Opt. Express 18, 25999-26006 (2010)

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