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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 26 — Dec. 20, 2010
  • pp: 27136–27141

Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers

C. S. Kim, Y. D. Jang, D. M. Shin, J. H. Kim, D. Lee, Y. H. Choi, M. S. Noh, and K. J. Yee  »View Author Affiliations


Optics Express, Vol. 18, Issue 26, pp. 27136-27141 (2010)
http://dx.doi.org/10.1364/OE.18.027136


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Abstract

Defects are one of the most important factors influencing the optical properties of groups III–V nitride semiconductor materials and thereby their applicability to light-emitting diodes. In this paper, we demonstrate that it is possible to estimate the presence of defects in InGaN laser diodes by performing pump-probe measurements and observing the induced absorptions. We have confirmed that the induced absorption originates from defects by performing experiments in which the pump intensity is varied. We believe that our method provides a powerful tool for evaluating the optical quality of InGaN materials before processing them into device fabrications.

© 2010 OSA

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

History
Original Manuscript: September 24, 2010
Revised Manuscript: November 22, 2010
Manuscript Accepted: December 1, 2010
Published: December 9, 2010

Citation
C. S. Kim, Y. D. Jang, D. M. Shin, J. H. Kim, D. Lee, Y. H. Choi, M. S. Noh, and K. J. Yee, "Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers," Opt. Express 18, 27136-27141 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-26-27136


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