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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 26 — Dec. 20, 2010
  • pp: 27191–27196

Structure and luminescence evolution of annealed Europium-doped silicon oxides films

Dongsheng Li, Xuwu Zhang, Lu Jin, and Deren Yang  »View Author Affiliations

Optics Express, Vol. 18, Issue 26, pp. 27191-27196 (2010)

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Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f65d-4f7(8S7/2) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.

© 2010 OSA

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: November 12, 2010
Revised Manuscript: December 5, 2010
Manuscript Accepted: December 6, 2010
Published: December 9, 2010

Dongsheng Li, Xuwu Zhang, Lu Jin, and Deren Yang, "Structure and luminescence evolution of annealed Europium-doped silicon oxides films," Opt. Express 18, 27191-27196 (2010)

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