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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 1994–2001

Design of a short electro-optic modulator based on SiGe HBT structure

Shengling Deng, Tuhin Guha Neogi, Joseph Novak, John McDonald, and Z. Rena Huang  »View Author Affiliations

Optics Express, Vol. 18, Issue 3, pp. 1994-2001 (2010)

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A SiGe electro-optic modulator operating at wavelength of 1.55μm is proposed. The “ON” state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a π phase shift is 73.6μm, and the total attenuation loss is 3.95dB. The rise and fall delay time is 70.9ps and 24.5ps, respectively.

© 2010 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

Original Manuscript: November 18, 2009
Revised Manuscript: January 13, 2010
Manuscript Accepted: January 14, 2010
Published: January 19, 2010

Shengling Deng, Tuhin G. Neogi, Joseph Novak, John McDonald, and Rena Huang, "Design of a short electro-optic modulator based on SiGe HBT structure," Opt. Express 18, 1994-2001 (2010)

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  1. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15(2), 660-668 (2007). [CrossRef] [PubMed]
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