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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 2230–2235

Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido  »View Author Affiliations

Optics Express, Vol. 18, Issue 3, pp. 2230-2235 (2010)

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This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10−2%. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.

© 2010 OSA

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:

Original Manuscript: October 8, 2009
Revised Manuscript: December 3, 2009
Manuscript Accepted: December 3, 2009
Published: January 20, 2010

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, "Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters," Opt. Express 18, 2230-2235 (2010)

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