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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 2302–2308

Effects of spin-polarized injection and photo-ionization of MnZnO film on GaN-based light-emitting diodes

Lung-Chien Chen, Ching-Ho Tien, and Chien-Sheng Mu  »View Author Affiliations

Optics Express, Vol. 18, Issue 3, pp. 2302-2308 (2010)

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This study discusses the effect of spin-polarized injection and photo-ionization on MnZnO films formed on the surface of GaN-based light-emitting diodes (LEDs). In a magnetic field, the optical output power of GaN-based LEDs increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from a MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. At forward bias of 3.4 V, the forward current of GaN-based LED with MnZnO film in a magnetic field of 0.5 T includes an injection current of 33.71 mA, spin-polarized current of 0.97 mA, and photo-ionized current of 0.4 mA.

© 2010 OSA

OCIS Codes
(160.3820) Materials : Magneto-optical materials
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: September 24, 2009
Revised Manuscript: November 20, 2009
Manuscript Accepted: November 23, 2009
Published: January 21, 2010

Lung-Chien Chen, Ching-Ho Tien, and Chien-Sheng Mu, "Effects of spin-polarized injection and photo-ionization of MnZnO film on GaN-based light-emitting diodes," Opt. Express 18, 2302-2308 (2010)

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