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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 2729–2742

Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, and Wen-Chau Liu  »View Author Affiliations

Optics Express, Vol. 18, Issue 3, pp. 2729-2742 (2010)

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GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2° tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0° tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.

© 2010 OSA

OCIS Codes
(160.0160) Materials : Materials
(230.0230) Optical devices : Optical devices
(250.0250) Optoelectronics : Optoelectronics
(260.0260) Physical optics : Physical optics

ToC Category:
Optical Devices

Original Manuscript: October 5, 2009
Revised Manuscript: December 18, 2009
Manuscript Accepted: December 21, 2009
Published: January 26, 2010

Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, and Wen-Chau Liu, "Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates," Opt. Express 18, 2729-2742 (2010)

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