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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 2797–2807

Scattering efficiency and near field enhancement of active semiconductor plasmonic antennas at terahertz frequencies

Vincenzo Giannini, Audrey Berrier, Stefan A. Maier, José Antonio Sánchez-Gil, and Jaime Gómez Rivas  »View Author Affiliations

Optics Express, Vol. 18, Issue 3, pp. 2797-2807 (2010)

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Terahertz plasmonic resonances in semiconductor (indium antimonide, InSb) dimer antennas are investigated theoretically. The antennas are formed by two rods separated by a small gap. We demonstrate that, with an appropriate choice of the shape and dimension of the semiconductor antennas, it is possible to obtain large electromagnetic field enhancement inside the gap. Unlike metallic antennas, the enhancement around the semiconductor plasmonics antenna can be easily adjusted by varying the concentration of free carriers, which can be achieved by optical or thermal excitation of carriers or electrical carrier injection. Such active plasmonic antennas are interesting structures for THz applications such as modulators and sensors.

© 2010 OSA

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(290.4210) Scattering : Multiple scattering
(040.2235) Detectors : Far infrared or terahertz
(250.5403) Optoelectronics : Plasmonics
(300.6495) Spectroscopy : Spectroscopy, teraherz
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Optics at Surfaces

Original Manuscript: November 13, 2009
Revised Manuscript: December 21, 2009
Manuscript Accepted: December 21, 2009
Published: January 26, 2010

Vincenzo Giannini, Audrey Berrier, Stefan A. Maier, José Antonio Sánchez-Gil, and Jaime Gómez Rivas, "Scattering efficiency and near field enhancement of active semiconductor plasmonic antennas at terahertz frequencies," Opt. Express 18, 2797-2807 (2010)

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