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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 4 — Feb. 15, 2010
  • pp: 3582–3591

Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides

Amy C. Turner-Foster, Mark A. Foster, Jacob S. Levy, Carl B. Poitras, Reza Salem, Alexander L. Gaeta, and Michal Lipson  »View Author Affiliations


Optics Express, Vol. 18, Issue 4, pp. 3582-3591 (2010)
http://dx.doi.org/10.1364/OE.18.003582


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Abstract

We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss.

© 2010 OSA

OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(130.7405) Integrated optics : Wavelength conversion devices

ToC Category:
Integrated Optics

History
Original Manuscript: October 29, 2009
Revised Manuscript: January 15, 2010
Manuscript Accepted: January 27, 2010
Published: February 4, 2010

Citation
Amy C. Turner-Foster, Mark A. Foster, Jacob S. Levy, Carl B. Poitras, Reza Salem, Alexander L. Gaeta, and Michal Lipson, "Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides," Opt. Express 18, 3582-3591 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-4-3582


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