OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 4 — Feb. 15, 2010
  • pp: 3687–3692

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide

H.K. Liang, S.F. Yu, and H.Y. Yang  »View Author Affiliations


Optics Express, Vol. 18, Issue 4, pp. 3687-3692 (2010)
http://dx.doi.org/10.1364/OE.18.003687


View Full Text Article

Enhanced HTML    Acrobat PDF (234 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (~150 °C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by ~5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is ~2.2 time larger than that of TM polarization.

© 2010 OSA

ToC Category:
Optical Devices

History
Original Manuscript: November 9, 2009
Revised Manuscript: December 9, 2009
Manuscript Accepted: December 16, 2009
Published: February 5, 2010

Citation
H.K. Liang, S.F. Yu, and H.Y. Yang, "Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide," Opt. Express 18, 3687-3692 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-4-3687


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
  2. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003). [CrossRef]
  3. D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006). [CrossRef]
  4. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007). [CrossRef]
  5. W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004). [CrossRef]
  6. M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006). [CrossRef]
  7. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009). [CrossRef]
  8. C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007). [CrossRef]
  9. C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005). [CrossRef]
  10. H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004). [CrossRef]
  11. S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited