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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 4 — Feb. 15, 2010
  • pp: 3687–3692

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide

H.K. Liang, S.F. Yu, and H.Y. Yang  »View Author Affiliations

Optics Express, Vol. 18, Issue 4, pp. 3687-3692 (2010)

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An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (~150 °C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by ~5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is ~2.2 time larger than that of TM polarization.

© 2010 OSA

ToC Category:
Optical Devices

Original Manuscript: November 9, 2009
Revised Manuscript: December 9, 2009
Manuscript Accepted: December 16, 2009
Published: February 5, 2010

H.K. Liang, S.F. Yu, and H.Y. Yang, "Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide," Opt. Express 18, 3687-3692 (2010)

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  1. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
  2. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003). [CrossRef]
  3. D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006). [CrossRef]
  4. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007). [CrossRef]
  5. W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004). [CrossRef]
  6. M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006). [CrossRef]
  7. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009). [CrossRef]
  8. C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007). [CrossRef]
  9. C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005). [CrossRef]
  10. H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004). [CrossRef]
  11. S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004). [CrossRef]

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