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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 4 — Feb. 15, 2010
  • pp: 3850–3857

Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates

Suresh Sridaran and Sunil A. Bhave  »View Author Affiliations

Optics Express, Vol. 18, Issue 4, pp. 3850-3857 (2010)

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We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics.

© 2010 OSA

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

Original Manuscript: November 24, 2009
Revised Manuscript: February 1, 2010
Manuscript Accepted: February 3, 2010
Published: February 11, 2010

Suresh Sridaran and Sunil A. Bhave, "Nanophotonic devices on thin buried oxide 
Silicon-On-Insulator substrates," Opt. Express 18, 3850-3857 (2010)

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