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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 5 — Mar. 1, 2010
  • pp: 4590–4600

Losses and group index dispersion in insulator-on-silicon-on-insulator ridge waveguides

Daniel Pergande and Ralf B. Wehrspohn  »View Author Affiliations

Optics Express, Vol. 18, Issue 5, pp. 4590-4600 (2010)

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We present polarization-dependent optical transmission properties of a completely symmetric silicon-on-insulator (SOI) microphotonic material system. In contrast to typical SOI based photonic materials, here an insulator-on-silicon-on-insulator (IOSOI) material system has been fabricated. This symmetric structure exhibits average losses between 1510 and 1630 nm of around 0.5 dB/mm for TE and 0.3 dB/mm for TM-polarization. The good transmission for TM-polarization can be explained by the thick insulting cladding layer of 3 μm thickness. Moreover, group index dispersion diagrams are presented and discussed for both polarizations.

© 2010 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

Original Manuscript: October 16, 2009
Revised Manuscript: December 10, 2009
Manuscript Accepted: December 11, 2009
Published: February 22, 2010

Daniel Pergande and Ralf B. Wehrspohn, "Losses and group index dispersion in insulator-on-silicon-on-insulator ridge waveguides," Opt. Express 18, 4590-4600 (2010)

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