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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 5 — Mar. 1, 2010
  • pp: 5106–5113

WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability

Qing Fang, Tsung-Yang Liow, Jun Feng Song, Kah Wee Ang, Ming Bin Yu, Guo Qiang Lo, and Dim-Lee Kwong  »View Author Affiliations

Optics Express, Vol. 18, Issue 5, pp. 5106-5113 (2010)

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A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 × 10−11, the WDM receiver showed an optical input sensitivity between −16 dBm and −19 dBm.

© 2010 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(220.0220) Optical design and fabrication : Optical design and fabrication

ToC Category:
Integrated Optics

Original Manuscript: November 16, 2009
Revised Manuscript: December 27, 2009
Manuscript Accepted: January 6, 2010
Published: February 25, 2010

Qing Fang, Tsung-Yang Liow, Jun Feng Song, Kah Wee Ang, Ming Bin Yu, Guo Qiang Lo, and Dim-Lee Kwong, "WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability," Opt. Express 18, 5106-5113 (2010)

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  1. Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “Cascaded silicon micro-ring modulators for WDM optical interconnection,” Opt. Express 14(20), 9431–9435 (2006). [CrossRef] [PubMed]
  2. G. Jacobsen and P. Wildhagen, “A general and rigorous WDM receiver model targeting 10-40-Gb/s channel bit rates,” J. Lightwave Technol. 19(7), 966–976 (2001). [CrossRef]
  3. B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007). [CrossRef]
  4. T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002). [CrossRef]
  5. Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005). [CrossRef]
  6. J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999). [CrossRef]
  7. M. Oehme, J. Werner and E. Kasper, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117–1– 071117–3 (2006).
  8. L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17(8), 6252–6257 (2009). [CrossRef] [PubMed]
  9. W. Y. Loh, J. Wang, J. D. Ye, R. Yang, H. S. Nguyen, K. T. Chua, J. F. Song, T. H. Loh, Y. Z. Xiong, S. J. Lee, M. B. Yu, G. Q. Lo and D, L, Kwong, “Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget,” IEEE Electron. Dev. Lett. 28, 984–986 (2007).
  10. L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009). [CrossRef] [PubMed]
  11. D. Ahn, C. Y. Hong, J. F. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
  12. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
  13. J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008). [CrossRef]
  14. S. J. Koester, “J. D, Schaub, G. Dehlinger and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic application,” IEEE J. Sel. Top. Quantum Electron. 12, 1489–1502 (2006). [CrossRef]
  15. Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009). [CrossRef]
  16. Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006). [CrossRef]
  17. W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004). [CrossRef]
  18. M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998). [CrossRef]
  19. M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995). [CrossRef]
  20. S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, and T. Topuria, P. M, Rice and Y. A. Vlasov, “ CMOS-Integrated 40GHz Germanium Waveguide Photodetector for On-chip Optical Interconnects,” Optical Fiber Communication Conference, OMR4 (2009).
  21. G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001). [CrossRef]

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