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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 5785–5790

Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform

Nicolás Sherwood-Droz, Alexander Gondarenko, and Michal Lipson  »View Author Affiliations


Optics Express, Vol. 18, Issue 6, pp. 5785-5790 (2010)
http://dx.doi.org/10.1364/OE.18.005785


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Abstract

We demonstrate a bulk silicon alternative to the conventional silicon-on-insulator photonics platform, using common CMOS process-based Si3N4 masking and oxidation techniques. We show waveguide losses as low as 2.92 dB/cm with a technique that can be implemented on the front-end of a typical CMOS fabrication line.

© 2010 OSA

OCIS Codes
(230.7380) Optical devices : Waveguides, channeled
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Integrated Optics

History
Original Manuscript: December 22, 2009
Revised Manuscript: January 27, 2010
Manuscript Accepted: January 27, 2010
Published: March 8, 2010

Citation
Nicolás Sherwood-Droz, Alexander Gondarenko, and Michal Lipson, "Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform," Opt. Express 18, 5785-5790 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-6-5785


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References

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