OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 5785–5790

Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform

Nicolás Sherwood-Droz, Alexander Gondarenko, and Michal Lipson  »View Author Affiliations

Optics Express, Vol. 18, Issue 6, pp. 5785-5790 (2010)

View Full Text Article

Enhanced HTML    Acrobat PDF (217 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



We demonstrate a bulk silicon alternative to the conventional silicon-on-insulator photonics platform, using common CMOS process-based Si3N4 masking and oxidation techniques. We show waveguide losses as low as 2.92 dB/cm with a technique that can be implemented on the front-end of a typical CMOS fabrication line.

© 2010 OSA

OCIS Codes
(230.7380) Optical devices : Waveguides, channeled
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Integrated Optics

Original Manuscript: December 22, 2009
Revised Manuscript: January 27, 2010
Manuscript Accepted: January 27, 2010
Published: March 8, 2010

Nicolás Sherwood-Droz, Alexander Gondarenko, and Michal Lipson, "Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform," Opt. Express 18, 5785-5790 (2010)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. A. Shacham, K. Bergman, and L. P. Carloni, “On the Design of a Photonic Network-on-Chip,” in Networks-on-Chip(2007), pp. 53–64.
  2. R. G. Beausoleil, P. J. Kuekes, G. S. Snider, W. Shih-Yuan, and R. S. Williams, “Nanoelectronic and Nanophotonic Interconnect,” Proc. IEEE 96(2), 230–247 (2008). [CrossRef]
  3. C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popovic, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kartner, R. J. Ram, V. Stojanovic, and K. Asanovic, “Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics,” (IEEE Computer Society Press, 2009), pp. 8–21.
  4. R. Koh, “Buried Layer Engineering to Reduce the Drain-Induced Barrier Lowering of Sub-0.05 μm SOI-MOSFET,” Jpn. J. Appl. Phys. 38(Part 1, No. 4B), 2294–2299 (1999). [CrossRef]
  5. C. Fenouillet-Beranger, T. Skotnicki, S. Monfray, N. Carriere, and F. Boeuf, “Requirements for ultra-thin-film devices and new materials for the CMOS roadmap,” Solid-State Electron. 48(6), 961–967 (2004). [CrossRef]
  6. J. M. Fedeli, M. Migette, L. Cioccio, L. El Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, and L. Vivien, “Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit,” in Group IV Photonics, 2006. 3rd IEEE International Conference on(2006), pp. 200–202.
  7. F. Y. Gardes, G. T. Reed, A. P. Knights, G. Mashanovich, P. E. Jessop, L. Rowe, S. McFaul, D. Bruce, and N. G. Tarr, “Sub-micron optical waveguides for silicon photonics formed via the local oxidation of silicon (LOCOS),” in Silicon Photonics III(SPIE, San Jose, CA, USA, 2008), pp. 68980R–68984.
  8. R. Pafchek, R. Tummidi, J. Li, M. A. Webster, E. Chen, and T. L. Koch, “Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation,” Appl. Opt. 48(5), 958–963 (2009). [CrossRef] [PubMed]
  9. C. W. Holzwarth, J. S. Orcutt, L. Hanqing, M. A. Popovic, V. Stojanovic, J. L. Hoyt, R. J. Ram, and H. I. Smith, “Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes,” in Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008.(2008), pp. 1–2.
  10. D. Andriukaitis, and R. Anilionis, “Thermal Oxidation in LOCOS, PBL, and SWAMI Micro and nano Structures,” (2007), p. 75.
  11. V. R. Almeida, R. R. Panepucci, and M. Lipson, “Nanotaper for compact mode conversion,” Opt. Lett. 28(15), 1302–1304 (2003). [CrossRef] [PubMed]
  12. T. Enomoto, R. Ando, H. Morita, and H. Nakayama, “Thermal Oxidation Rate of a Si3N4 Film and Its Masking Effect against Oxidation of Silicon,” Jpn. J. Appl. Phys. 17(6), 1049–1058 (1978). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3
Fig. 4

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited