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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 6333–6339

Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO3:Zr,Cu,Ce

Fucai Liu, Yongfa Kong, Xinyu Ge, Hongde Liu, Shiguo Liu, Shaolin Chen, Romano Rupp, and Jingjun Xu  »View Author Affiliations


Optics Express, Vol. 18, Issue 6, pp. 6333-6339 (2010)
http://dx.doi.org/10.1364/OE.18.006333


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Abstract

We have designed and grown triply doped LiNbO3:Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It’s observed that the photorefractive sensitivity of LiNbO3:Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO3:Cu,Ce. And LiNbO3:Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO3:Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.

© 2010 OSA

OCIS Codes
(090.2900) Holography : Optical storage materials
(160.3730) Materials : Lithium niobate
(210.2860) Optical data storage : Holographic and volume memories

ToC Category:
Optical Data Storage

History
Original Manuscript: November 23, 2009
Revised Manuscript: January 31, 2010
Manuscript Accepted: February 5, 2010
Published: March 12, 2010

Citation
Fucai Liu, Yongfa Kong, Xinyu Ge, Hongde Liu, Shiguo Liu, Shaolin Chen, Romano Rupp, and Jingjun Xu, "Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO3:Zr,Cu,Ce," Opt. Express 18, 6333-6339 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-6-6333


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