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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 7 — Mar. 29, 2010
  • pp: 6522–6529

Reflectometry-based wavelength scanning interferometry for thickness measurements of very thin wafers

Young-Sik Ghim, Amit Suratkar, and Angela Davies  »View Author Affiliations

Optics Express, Vol. 18, Issue 7, pp. 6522-6529 (2010)

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With the development of microelectronics, the demand for silicon wafers is greatly increased for various purposes, especially the use of thin wafers for smart cards, cellular phones and stacked packages. In this paper, we describe an innovative scheme of combining wavelength scanning interferometry (4 nm tuning range centered at 1550 nm) with spectroscopic reflectometry that enables us to measure the thickness profile of thin wafers below 100 μm with high thickness resolution. The performance of this method is compared with that of an existing technique and verified by measuring several thin wafers.

© 2010 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(120.4640) Instrumentation, measurement, and metrology : Optical instruments
(160.6000) Materials : Semiconductor materials

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: January 5, 2010
Manuscript Accepted: January 24, 2010
Published: March 15, 2010

Young-Sik Ghim, Amit Suratkar, and Angela Davies, "Reflectometry-based wavelength scanning interferometry for thickness measurements of very thin wafers," Opt. Express 18, 6522-6529 (2010)

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