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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 8 — Apr. 12, 2010
  • pp: 7782–7789

Numerical study on heterodyne terahertz detection in field effect transistor

Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, and Juncheng Cao  »View Author Affiliations

Optics Express, Vol. 18, Issue 8, pp. 7782-7789 (2010)

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Numerical method on the heterodyne terahertz detection characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.

© 2010 OSA

OCIS Codes
(040.1880) Detectors : Detection
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: February 5, 2010
Revised Manuscript: March 25, 2010
Manuscript Accepted: March 26, 2010
Published: March 30, 2010

Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, and Juncheng Cao, "Numerical study on heterodyne terahertz detection in field effect transistor," Opt. Express 18, 7782-7789 (2010)

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