OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 8 — Apr. 12, 2010
  • pp: 7782–7789

Numerical study on heterodyne terahertz detection in field effect transistor

Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, and Juncheng Cao  »View Author Affiliations


Optics Express, Vol. 18, Issue 8, pp. 7782-7789 (2010)
http://dx.doi.org/10.1364/OE.18.007782


View Full Text Article

Enhanced HTML    Acrobat PDF (3938 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Numerical method on the heterodyne terahertz detection characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.

© 2010 OSA

OCIS Codes
(040.1880) Detectors : Detection
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Detectors

History
Original Manuscript: February 5, 2010
Revised Manuscript: March 25, 2010
Manuscript Accepted: March 26, 2010
Published: March 30, 2010

Citation
Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, and Juncheng Cao, "Numerical study on heterodyne terahertz detection in field effect transistor," Opt. Express 18, 7782-7789 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-8-7782


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993). [CrossRef] [PubMed]
  2. M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996). [CrossRef]
  3. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002). [CrossRef]
  4. A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006). [CrossRef]
  5. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004). [CrossRef]
  6. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006). [CrossRef]
  7. M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005). [CrossRef]
  8. D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006). [CrossRef]
  9. V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).
  10. D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009). [CrossRef]
  11. X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).
  12. Y. Wang, Y. Chen, F. He, X. Mou, and C. Ma, “Numerical Study on Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal,” IEEE ELECTRO-2009, India, (2009).
  13. B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008). [CrossRef]
  14. H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited