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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 8 — Apr. 12, 2010
  • pp: 7994–7999

High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides

Ning-Ning Feng, Shirong Liao, Dazeng Feng, Po Dong, Dawei Zheng, Hong Liang, Roshanak Shafiiha, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 18, Issue 8, pp. 7994-7999 (2010)
http://dx.doi.org/10.1364/OE.18.007994


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Abstract

We demonstrate a very efficient high speed silicon modulator with an ultralow π-phase-shift voltage-length product VπL = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25μm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.

© 2010 OSA

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: February 11, 2010
Revised Manuscript: March 29, 2010
Manuscript Accepted: March 30, 2010
Published: March 31, 2010

Citation
Ning-Ning Feng, Shirong Liao, Dazeng Feng, Po Dong, Dawei Zheng, Hong Liang, Roshanak Shafiiha, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides," Opt. Express 18, 7994-7999 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-8-7994


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