High speed carrier-depletion modulators with 1.4V-cm V<sub>π</sub>L integrated on 0.25μm silicon-on-insulator waveguides

doi:10.1364/OE.18.007994

High speed carrier-depletion modulators with 1.4V-cm V_πL integrated on 0.25μm silicon-on-insulator waveguides

Ning-Ning Feng, Shirong Liao, Dazeng Feng, Po Dong, Dawei Zheng, Hong Liang, Roshanak Shafiiha, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari »View Author Affiliations

Optics Express, Vol. 18, Issue 8, pp. 7994-7999 (2010)
http://dx.doi.org/10.1364/OE.18.007994

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Abstract

We demonstrate a very efficient high speed silicon modulator with an ultralow π-phase-shift voltage-length product V_πL = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25μm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: February 11, 2010
Revised Manuscript: March 29, 2010
Manuscript Accepted: March 30, 2010
Published: March 31, 2010

Citation
Ning-Ning Feng, Shirong Liao, Dazeng Feng, Po Dong, Dawei Zheng, Hong Liang, Roshanak Shafiiha, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "High speed carrier-depletion modulators with 1.4V-cm V_πL integrated on 0.25μm silicon-on-insulator waveguides," Opt. Express 18, 7994-7999 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-8-7994

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References

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006). [CrossRef]
L. C. Kimerling, L. Dal Negro, S. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, J. Liu, J. G. Sandland, D. Sparacin, J. Michel, K. Wada, and M. R. Watts, “Monolithic silicon microphotonics,” in Silicon Photonics: Topics in Applied Physics, L. Pavesi and D. J. Lockwood, eds., (Springer, Berlin, 2004) vol.94.
G. T. Reed, and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer Systems Based on Silicon Photonic Interconnects,” Proc. IEEE 97, 1337–1361 (2009). [CrossRef]
O. Boyraz and B. Jalali, “Demonstration of a silicon Raman laser,” Opt. Express 12(21), 5269–5273 (2004). [CrossRef] [PubMed]
H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009). [CrossRef] [PubMed]
L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 16, 6252 (2008).
T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010). [CrossRef] [PubMed]
A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004). [CrossRef] [PubMed]
L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express 13(8), 3129–3135 (2005). [CrossRef] [PubMed]
Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005). [CrossRef] [PubMed]
Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express 15(2), 430–436 (2007). [CrossRef] [PubMed]
W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express 15(25), 17106–17113 (2007). [CrossRef] [PubMed]
A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007). [CrossRef] [PubMed]
D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
S. J. Spector, M. W. Geis, G.-R. Zhou, M. E. Grein, F. Gan, M. A. Popovic, J. U. Yoon, D. M. Lennon, E. P. Ippen, F. Z. Kärtner, and T. M. Lyszczarz, “CMOS-compatible dual-output silicon modulator for analog signal processing,” Opt. Express 16(15), 11027–11031 (2008). [CrossRef] [PubMed]
D. M. Gill, S. S. Patel, M. Rasras, K.-Y. Tu, A. E. White, Y.-K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS compatible Si-ring assisted Mach-Zehnder interferometer with internal bandwidth equalization,” Proceedings of 6th IEEE International Conference on Group IV Photonics (IEEE 2009), paper PD 1.2.
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009). [CrossRef]
J. E. Roth, O. Fidaner, Y. Schaevitz, Y. Kuo, T. I. Kamins, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum well structures on silicon,” Opt. Express 15, 5851 (2007). [CrossRef] [PubMed]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008). [CrossRef]
R. A. Soref and B. R. Bennett, “Electro-optical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987). [CrossRef]
D. Zheng, D. Feng, G. Gutierrez, and T. Smith, “Design of a 10GHz silicon modulator based on a 0.25μm CMOS process: a silicon photonic approach,” Proc. SPIE 6125, 61250E (2006). [CrossRef]
D. Feng, D. Zheng, and T. Smith, “Traveling-wave high-speed silicon modulator,” Integrated Photon. Res. Appl. (IPRA), ITUB4 (2006).
R. C. Williamson, “Sensitivity-bandwidth product for electro-optic modulators,” Opt. Lett. 26(17), 1362–1363 (2001). [CrossRef]

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[1] L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006). [CrossRef]

[2] L. C. Kimerling, L. Dal Negro, S. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, J. Liu, J. G. Sandland, D. Sparacin, J. Michel, K. Wada, and M. R. Watts, “Monolithic silicon microphotonics,” in Silicon Photonics: Topics in Applied Physics, L. Pavesi and D. J. Lockwood, eds., (Springer, Berlin, 2004) vol.94.

[3] G. T. Reed, and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).

[4] A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer Systems Based on Silicon Photonic Interconnects,” Proc. IEEE 97, 1337–1361 (2009). [CrossRef]

[5] O. Boyraz and B. Jalali, “Demonstration of a silicon Raman laser,” Opt. Express 12(21), 5269–5273 (2004). [CrossRef] [PubMed]

[6] H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]

[7] A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]

[8] L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009). [CrossRef] [PubMed]

[9] L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 16, 6252 (2008).

[10] T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]

[11] D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]

[12] D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]

[13] N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010). [CrossRef] [PubMed]

[14] A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004). [CrossRef] [PubMed]

[15] L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express 13(8), 3129–3135 (2005). [CrossRef] [PubMed]

[16] Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005). [CrossRef] [PubMed]

[17] Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express 15(2), 430–436 (2007). [CrossRef] [PubMed]

[18] W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express 15(25), 17106–17113 (2007). [CrossRef] [PubMed]

[19] A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007). [CrossRef] [PubMed]

[20] D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]

[21] S. J. Spector, M. W. Geis, G.-R. Zhou, M. E. Grein, F. Gan, M. A. Popovic, J. U. Yoon, D. M. Lennon, E. P. Ippen, F. Z. Kärtner, and T. M. Lyszczarz, “CMOS-compatible dual-output silicon modulator for analog signal processing,” Opt. Express 16(15), 11027–11031 (2008). [CrossRef] [PubMed]

[22] D. M. Gill, S. S. Patel, M. Rasras, K.-Y. Tu, A. E. White, Y.-K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS compatible Si-ring assisted Mach-Zehnder interferometer with internal bandwidth equalization,” Proceedings of 6th IEEE International Conference on Group IV Photonics (IEEE 2009), paper PD 1.2.

[23] P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009). [CrossRef]

[24] J. E. Roth, O. Fidaner, Y. Schaevitz, Y. Kuo, T. I. Kamins, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum well structures on silicon,” Opt. Express 15, 5851 (2007). [CrossRef] [PubMed]

[25] J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008). [CrossRef]

[26] R. A. Soref and B. R. Bennett, “Electro-optical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987). [CrossRef]

[27] D. Zheng, D. Feng, G. Gutierrez, and T. Smith, “Design of a 10GHz silicon modulator based on a 0.25μm CMOS process: a silicon photonic approach,” Proc. SPIE 6125, 61250E (2006). [CrossRef]

[28] D. Feng, D. Zheng, and T. Smith, “Traveling-wave high-speed silicon modulator,” Integrated Photon. Res. Appl. (IPRA), ITUB4 (2006).

[29] R. C. Williamson, “Sensitivity-bandwidth product for electro-optic modulators,” Opt. Lett. 26(17), 1362–1363 (2001). [CrossRef]

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High speed carrier-depletion modulators with 1.4V-cm V_πL integrated on 0.25μm silicon-on-insulator waveguides