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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 8 — Apr. 12, 2010
  • pp: 8144–8150

Optics InfoBase > Optics Express > Volume 18 > Issue 8 > Page 8144

High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity

Masahiro Nomura, Katsuaki Tanabe, Satoshi Iwamoto, and Yasuhiko Arakawa  »View Author Affiliations


Optics Express, Vol. 18, Issue 8, pp. 8144-8150 (2010)
http://dx.doi.org/10.1364/OE.18.008144


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Abstract

We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Γ-M direction, in addition to the Γ-K direction, resulted in a cavity quality factor Q of 2.8 × 105 sustaining the small modal volume of 0.23(λ0/n)3. The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the kx and ky axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials.

© 2010 OSA

OCIS Codes
(270.5580) Quantum optics : Quantum electrodynamics
(050.5298) Diffraction and gratings : Photonic crystals
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Photonic Crystals

History
Original Manuscript: March 1, 2010
Revised Manuscript: March 26, 2010
Manuscript Accepted: March 26, 2010
Published: April 1, 2010

Citation
Masahiro Nomura, Katsuaki Tanabe, Satoshi Iwamoto, and Yasuhiko Arakawa, "High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity," Opt. Express 18, 8144-8150 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-8-8144


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