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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 18, Iss. S4 — Nov. 8, 2010
  • pp: A544–A553

Lower bound of energy dissipation in optical excitation transfer via optical near-field interactions

Makoto Naruse, Hirokazu Hori, Kiyoshi Kobayashi, Petter Holmström, Lars Thylén, and Motoichi Ohtsu  »View Author Affiliations

Optics Express, Vol. 18, Issue S4, pp. A544-A553 (2010)

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We theoretically analyzed the lower bound of energy dissipation required for optical excitation transfer from smaller quantum dots to larger ones via optical near-field interactions. The coherent interaction between two quantum dots via optical near-fields results in unidirectional excitation transfer by an energy dissipation process occurring in the larger dot. We investigated the lower bound of this energy dissipation, or the intersublevel energy difference at the larger dot, when the excitation appearing in the larger dot originated from the excitation transfer via optical near-field interactions. We demonstrate that the energy dissipation could be as low as 25 μeV. Compared with the bit flip energy of an electrically wired device, this is about 104 times more energy efficient. The achievable integration density of nanophotonic devices is also analyzed based on the energy dissipation and the error ratio while assuming a Yukawa-type potential for the optical near-field interactions.

© 2010 OSA

OCIS Codes
(200.3050) Optics in computing : Information processing
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(260.2160) Physical optics : Energy transfer
(180.4243) Microscopy : Near-field microscopy

ToC Category:
Energy Transfer

Original Manuscript: August 2, 2010
Revised Manuscript: August 31, 2010
Manuscript Accepted: September 23, 2010
Published: October 5, 2010

Makoto Naruse, Hirokazu Hori, Kiyoshi Kobayashi, Petter Holmström, Lars Thylén, and Motoichi Ohtsu, "Lower bound of energy dissipation in optical excitation transfer via optical near-field interactions," Opt. Express 18, A544-A553 (2010)

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