OSA's Digital Library

Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 18, Iss. S4 — Nov. 8, 2010
  • pp: A562–A567

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai  »View Author Affiliations

Optics Express, Vol. 18, Issue S4, pp. A562-A567 (2010)

View Full Text Article

Enhanced HTML    Acrobat PDF (921 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 1018/cm3 was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.

© 2010 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: August 31, 2010
Revised Manuscript: September 29, 2010
Manuscript Accepted: September 30, 2010
Published: October 11, 2010

Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai, "InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film," Opt. Express 18, A562-A567 (2010)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. E. F. Schubert, Light-emitting diodes, pp.150–160 (Second Edition, Cambridge University Press, Cambridge, U.K., 2006.)
  2. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), 2569 (1999). [CrossRef]
  3. C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, ““High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Photon. Technol. Lett. 18(11), 1213–1215 (2006) (and references therein). [CrossRef]
  4. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, and W. C. Lai, “InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface,” Appl. Phys. Lett. 88(11), 113505 (2006). [CrossRef]
  5. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, “Nitride-based LEDs with textured side walls,” IEEE Photon. Technol. Lett. 16(3), 750–752 (2004). [CrossRef]
  6. J.-S. Lee, J. Lee, S. Kim, and H. Jeon, “GaN-based light-emitting diode structure with monolithically integrated sidewall deflectors for enhanced surface emission,” IEEE Photon. Technol. Lett. 18(15), 1588–1590 (2006). [CrossRef]
  7. C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, “Light-output Enhancement in a Nitride Based Light-emitting Diode with 22° Undercut Side Walls,” IEEE Photon. Technol. Lett. 17(1), 19–21 (2005). [CrossRef]
  8. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low- operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0. 3Ga0. 7N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001). [CrossRef]
  9. H. G. Kim, T. V. Cuong, H. Jeong, S. H. Woo, O. H. Cha, E.-K. Suh, C.-H. Hong, H. K. Cho, B. H. Kong, and M. S. Jeong, “Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diode,” Appl. Phys. Lett. 92(6), 061118 (2008). [CrossRef]
  10. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, “Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy,” J. Cryst. Growth 144(3-4), 133–140 (1994). [CrossRef]
  11. M. L. Lee, J. K. Sheu, and C. C. Hu, “Nonalloyed Cr/ Au-based Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007). [CrossRef]
  12. C. F. Lin, H. C. Cheng, G. C. Chi, C. J. Bu, and M. S. Feng, “Improved contact performance of GaN film using Si diffusion,” Appl. Phys. Lett. 76(14), 1878 (2000). [CrossRef]
  13. J. K. Sheu and G. C. Chi, “The doping process and dopant characteristics of GaN,” J. Phys. 14, R657 (2002).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited