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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 10 — May. 9, 2011
  • pp: 9385–9391

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate

Tae Su Oh, Hyun Jeong, Yong Seok Lee, Ah Hyun Park, Tae Hoon Seo, Hun Kim, Kang Jea Lee, Mun Seok Jeong, and Eun-Kyung Suh  »View Author Affiliations


Optics Express, Vol. 19, Issue 10, pp. 9385-9391 (2011)
http://dx.doi.org/10.1364/OE.19.009385


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Abstract

GaN-based light-emitting diode (LED) was fabricated on the sapphire substrate with monolithic convex microstructures (CMs) array. Using confocal scanning electroluminescence (EL), we have directly observed the strong outcoupling phenomenon of the light confined in a LED via the CMs array. This outcoupled light could be efficiently converged on the convex center through consecutive reflections at the flat area and the curved slant area of the CMs array. Compared to the conventional LED, the ray tracing simulation and far field EL results of the LED with a CM array showed efficient light extraction toward the top surface, i.e., 0-5, 40-45 and 60-65 degree by the outcoupling effect. We conclude that the outcoupled optical path via CMs is the dominant factor of the enhanced light extraction in the LED with a CM array.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(180.1790) Microscopy : Confocal microscopy
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: March 18, 2011
Revised Manuscript: April 22, 2011
Manuscript Accepted: April 23, 2011
Published: April 28, 2011

Citation
Tae Su Oh, Hyun Jeong, Yong Seok Lee, Ah Hyun Park, Tae Hoon Seo, Hun Kim, Kang Jea Lee, Mun Seok Jeong, and Eun-Kyung Suh, "Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate," Opt. Express 19, 9385-9391 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-10-9385


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