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Fast saturable absorption and 10 GHz wavelength conversion in Al-quaternary multiple quantum wellsRichard P. Green, Mohsin Haji, Lianping Hou, Gabor Mezosi, Rafal Dylewicz, and Anthony E. Kelly »View Author Affiliations
Richard P. Green,1,2,*
Mohsin Haji,2
Lianping Hou,2
Gabor Mezosi,2
Rafal Dylewicz,2
and Anthony E. Kelly2
1Department of Physics, University College Cork, Cork, Ireland 2School of Engineering,University of Glasgow, Glasgow G12 8LT, UK *Corresponding author: r.green@ucc.ie |
Optics Express, Vol. 19, Issue 10, pp. 9737-9743 (2011)
http://dx.doi.org/10.1364/OE.19.009737
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Abstract
We measured the absorption recovery times in reverse biased AlInGaAs multiple quantum well material designed to emit at around 1.5 μm wavelength. Absorption recovery times as low as 2.5ps were found at −4V bias, with values below 5ps consistently found for biases above 3V. The short absorption recovery times obtained under reverse bias were confirmed by using cross-absorption modulation in the material to demonstrate wavelength conversion of a 10GHz pulse train, showing both up and down conversion of the incident pulses.
© 2011 OSA
OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(320.5390) Ultrafast optics : Picosecond phenomena
(230.7405) Optical devices : Wavelength conversion devices
ToC Category:
Optical Devices
History
Original Manuscript: January 7, 2011
Revised Manuscript: April 1, 2011
Manuscript Accepted: April 5, 2011
Published: May 4, 2011
Citation
Richard P. Green, Mohsin Haji, Lianping Hou, Gabor Mezosi, Rafal Dylewicz, and Anthony E. Kelly, "Fast saturable absorption and 10 GHz wavelength conversion in Al-quaternary multiple quantum wells," Opt. Express 19, 9737-9743 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-10-9737
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References
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- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
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- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B. Benkelfat, and A. Ramdane, “New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high speed all-optical wavelength conversion” IEEE Photon. Technol. Lett. 16, 2302–2304 (2004). [CrossRef]
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- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- L. Hou, M. Haji, R. Dylewicz, P. Stolarz, B. Qiu, E. A. Avrutin, and A. C. Bryce, “160 GHz harmonic mode-locked AlGaInAs 1.55μm strained quantum-well compound-cavity laser,” Opt. Lett. 35, 3991–3993 (2010). [CrossRef] [PubMed]
- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, M. Haji, R. Dylewicz, P. Stolarz, B. Qiu, E. A. Avrutin, and A. C. Bryce, “160 GHz harmonic mode-locked AlGaInAs 1.55μm strained quantum-well compound-cavity laser,” Opt. Lett. 35, 3991–3993 (2010). [CrossRef] [PubMed]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- K. Nishimura, R. Inohara, M. Usami, and S. Akiba, “All-optical wavelength conversion by electroabsorption modulator,” IEEE J. Sel. Top. Quantum Electron. 11, 278–284 (2005). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- J. Javaloyes and S. Balle, “Mode-locking in semiconductor Fabry-Pérot lasers,” IEEE J. Quantum Electron. 46, 1023–1030 (2010). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
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- H. Schneider and K. v. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1−xAs multiple-quantum-well structure,” Phys. Rev. B 38, 6160–6165 (1988). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
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- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
- K. Nishimura, R. Inohara, M. Usami, and S. Akiba, “All-optical wavelength conversion by electroabsorption modulator,” IEEE J. Sel. Top. Quantum Electron. 11, 278–284 (2005). [CrossRef]
- K. Nishimura and M. Usami, “Optical wavelength conversion by electro-absorption modulators,” Active and Passive Optical Components for WDM Communications IV, Proc. SPIE 5595, 234–243 (2004).
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, M. Haji, R. Dylewicz, P. Stolarz, B. Qiu, E. A. Avrutin, and A. C. Bryce, “160 GHz harmonic mode-locked AlGaInAs 1.55μm strained quantum-well compound-cavity laser,” Opt. Lett. 35, 3991–3993 (2010). [CrossRef] [PubMed]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B. Benkelfat, and A. Ramdane, “New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high speed all-optical wavelength conversion” IEEE Photon. Technol. Lett. 16, 2302–2304 (2004). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- H. Schneider and K. v. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1−xAs multiple-quantum-well structure,” Phys. Rev. B 38, 6160–6165 (1988). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B. Benkelfat, and A. Ramdane, “New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high speed all-optical wavelength conversion” IEEE Photon. Technol. Lett. 16, 2302–2304 (2004). [CrossRef]
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- C.-C. Lin, K.-S. Liu, M.-C. Wu, and H.-P. Shiao, “Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes,” Electron. Lett. 34, 1667–1668 (1998). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- L. Hou, M. Haji, R. Dylewicz, P. Stolarz, B. Qiu, E. A. Avrutin, and A. C. Bryce, “160 GHz harmonic mode-locked AlGaInAs 1.55μm strained quantum-well compound-cavity laser,” Opt. Lett. 35, 3991–3993 (2010). [CrossRef] [PubMed]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- R. Takahashi, “Low-temperature-grown surface-reflection all-optical switch (LOTOS),” Opt. Quantum Electron. 33, 999 (2001). [CrossRef]
- K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” N. J. Phys. 6, 179 (2004). [CrossRef]
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- K. Nishimura, R. Inohara, M. Usami, and S. Akiba, “All-optical wavelength conversion by electroabsorption modulator,” IEEE J. Sel. Top. Quantum Electron. 11, 278–284 (2005). [CrossRef]
- K. Nishimura and M. Usami, “Optical wavelength conversion by electro-absorption modulators,” Active and Passive Optical Components for WDM Communications IV, Proc. SPIE 5595, 234–243 (2004).
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” N. J. Phys. 6, 179 (2004). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” N. J. Phys. 6, 179 (2004). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- C.-C. Lin, K.-S. Liu, M.-C. Wu, and H.-P. Shiao, “Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes,” Electron. Lett. 34, 1667–1668 (1998). [CrossRef]
Active and Passive Optical Components for WDM Communications IV, Proc. SPIE
- K. Nishimura and M. Usami, “Optical wavelength conversion by electro-absorption modulators,” Active and Passive Optical Components for WDM Communications IV, Proc. SPIE 5595, 234–243 (2004).
Appl. Phys. Lett.
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
Electron. Lett.
- C.-C. Lin, K.-S. Liu, M.-C. Wu, and H.-P. Shiao, “Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes,” Electron. Lett. 34, 1667–1668 (1998). [CrossRef]
IEEE J. Quantum Electron.
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- J. Javaloyes and S. Balle, “Mode-locking in semiconductor Fabry-Pérot lasers,” IEEE J. Quantum Electron. 46, 1023–1030 (2010). [CrossRef]
IEEE J. Sel. Top. Quantum Electron.
- K. Nishimura, R. Inohara, M. Usami, and S. Akiba, “All-optical wavelength conversion by electroabsorption modulator,” IEEE J. Sel. Top. Quantum Electron. 11, 278–284 (2005). [CrossRef]
IEEE Photon. Technol. Lett.
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B. Benkelfat, and A. Ramdane, “New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high speed all-optical wavelength conversion” IEEE Photon. Technol. Lett. 16, 2302–2304 (2004). [CrossRef]
- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
N. J. Phys.
- K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” N. J. Phys. 6, 179 (2004). [CrossRef]
Nature (London)
- U. Keller, “Recent developments in compact ultrafast lasers,” Nature (London) 424, 831–838 (2003). [CrossRef]
Opt. Lett.
- L. Hou, M. Haji, R. Dylewicz, P. Stolarz, B. Qiu, E. A. Avrutin, and A. C. Bryce, “160 GHz harmonic mode-locked AlGaInAs 1.55μm strained quantum-well compound-cavity laser,” Opt. Lett. 35, 3991–3993 (2010). [CrossRef] [PubMed]
Opt. Quantum Electron.
- R. Takahashi, “Low-temperature-grown surface-reflection all-optical switch (LOTOS),” Opt. Quantum Electron. 33, 999 (2001). [CrossRef]
Phys. Rev. B
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- H. Schneider and K. v. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1−xAs multiple-quantum-well structure,” Phys. Rev. B 38, 6160–6165 (1988). [CrossRef]
2010, Sayid, IEEE J. Quantum Electron.
- S. Sayid, I. Marko, P. Cannard, X. Chen, L. Rivers, I. Lealman, and S. Sweeney, “Thermal characteristics of 1.55 μm InGaAlAs quantum well buried heterostructure lasers,” IEEE J. Quantum Electron. 46, 700–705 (2010). [CrossRef]
- L. Hou, M. Haji, R. Dylewicz, B. Qiu, and A. C. Bryce, “Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology,” IEEE Photon. Technol. Lett. 22, 1039–1041 (2010). [CrossRef]
- L. Hou, R. Dylewicz, M. Haji, P. Stolarz, B. Qiu, and A. Bryce, “Monolithic 40-GHz passively mode-locked AlGaInAs -InP 1.55-μm MQW laser with surface-etched distributed bragg reflector,” IEEE Photon. Technol. Lett. 22, 1503–1505 (2010). [CrossRef]
- J. Javaloyes and S. Balle, “Mode-locking in semiconductor Fabry-Pérot lasers,” IEEE J. Quantum Electron. 46, 1023–1030 (2010). [CrossRef]
- R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie, “Gain recovery dynamics of a terahertz quantum cascade laser,” Phys. Rev. B 80, 075303 (2009). [CrossRef]
- L. Hou, P. Stolarz, J. Javaloyes, R. Green, C. Ironside, M. Sorel, and A. Bryce, “Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs-InP 1.55μm strained quantum-well laser,” IEEE Photon. Technol. Lett. 21, 1731–1733 (2009). [CrossRef]
- D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89, 171111 (2006). [CrossRef]
- K. Nishimura, R. Inohara, M. Usami, and S. Akiba, “All-optical wavelength conversion by electroabsorption modulator,” IEEE J. Sel. Top. Quantum Electron. 11, 278–284 (2005). [CrossRef]
- K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” N. J. Phys. 6, 179 (2004). [CrossRef]
- N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B. Benkelfat, and A. Ramdane, “New design of InGaAs-InGaAlAs MQW electroabsorption modulator for high speed all-optical wavelength conversion” IEEE Photon. Technol. Lett. 16, 2302–2304 (2004). [CrossRef]
- K. Nishimura and M. Usami, “Optical wavelength conversion by electro-absorption modulators,” Active and Passive Optical Components for WDM Communications IV, Proc. SPIE 5595, 234–243 (2004).
- U. Keller, “Recent developments in compact ultrafast lasers,” Nature (London) 424, 831–838 (2003). [CrossRef]
- R. Takahashi, “Low-temperature-grown surface-reflection all-optical switch (LOTOS),” Opt. Quantum Electron. 33, 999 (2001). [CrossRef]
- C.-C. Lin, K.-S. Liu, M.-C. Wu, and H.-P. Shiao, “Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes,” Electron. Lett. 34, 1667–1668 (1998). [CrossRef]
- E. L. Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, “Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,” Appl. Phys. Lett. 72, 759–761 (1998). [CrossRef]
- J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton, “Ultrafast dynamics in field-enhanced saturable absorbers,” Appl. Phys. Lett. 64, 676–678 (1994). [CrossRef]
- H. Schneider and K. v. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1−xAs multiple-quantum-well structure,” Phys. Rev. B 38, 6160–6165 (1988). [CrossRef]
- C. V.-B. Grimm, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, K. Biermann, and H. Künzel, “Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AlAs/AlAsSb,” Appl. Phys. Lett. 91, 191121 (2007).
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