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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 10 — May. 9, 2011
  • pp: 9863–9867

Characterization of highly stable mid-IR, GaSb-based laser diodes

A. V. Okishev  »View Author Affiliations


Optics Express, Vol. 19, Issue 10, pp. 9863-9867 (2011)
http://dx.doi.org/10.1364/OE.19.009863


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Abstract

Highly stable room-temperature, mid-IR, GaSb-based laser diodes have been characterized at various temperatures and driver currents. Up to 54 mW of output power was demonstrated in a 3150- to 3180-nm–wavelength range with <20-nm FWHM spectral width.

© 2011 OSA

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: February 24, 2011
Revised Manuscript: March 28, 2011
Manuscript Accepted: March 29, 2011
Published: May 5, 2011

Citation
A. V. Okishev*, "Characterization of highly stable mid-IR, GaSb-based laser diodes," Opt. Express 19, 9863-9867 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-10-9863


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References

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